Projects per year
Abstract
Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new
class of near-infrared devices where, by use of the unusual band
structure properties of GaAsBi alloys, it is possible to suppress the
dominant energy-consuming Auger recombination and inter-valence band
absorption loss mechanisms, which greatly impact upon the device
performance. Suppression of these loss mechanisms promises to lead to
highly efficient, uncooled operation of telecommunications lasers,
making GaAsBi system a strong candidate for the development of
next-generation semiconductor lasers. In this report we present the
first experimentally measured optical gain, absorption and spontaneous
emission spectra for GaAsBi-based quantum well laser structures. We
determine internal optical losses of 10–15 cm−1 and a peak modal gain of 24 cm−1, corresponding to a material gain of approximately 1500 cm−1 at a current density of 2 kA cm−2.
To complement the experimental studies, a theoretical analysis of the
spontaneous emission and optical gain spectra is presented, using a
model based upon a 12-band k.p Hamiltonian for GaAsBi alloys. The
results of our theoretical calculations are in excellent quantitative
agreement with the experimental data, and together provide a powerful
predictive capability for use in the design and optimisation of high
efficiency lasers in the infrared.
Original language | English |
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Article number | 28863 |
Number of pages | 10 |
Journal | Scientific Reports |
Volume | 6 |
DOIs | |
Publication status | Published - 1 Jul 2016 |
Research Groups and Themes
- Photonics and Quantum
Fingerprint
Dive into the research topics of 'Optical gain in GaAsBi/GaAs quantum well diode lasers'. Together they form a unique fingerprint.Projects
- 2 Finished
-
Semiconductor III-V Quantum-Dot Solar Cells on Silicon Substrates
Rorison, J. M. (Principal Investigator)
1/07/13 → 30/06/17
Project: Research
-
ELECTRICALLY PUMPED BROAD BAND AND VERTICAL CAVITY SEMICONDUCTOR DILUTE NITRIDE AMPLIFIERS FOR METRO AND ACCESS NETWORKS
Rorison, J. M. (Principal Investigator)
2/03/09 → 2/03/12
Project: Research