Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

Chris J Hodges; Nicole Killat; S. W. Kaun; M. H. Wong; F. Gao; T. Palacios; U. K. Mishra; J. S. Speck; D. Wolverson; M Kuball

doi:10.1063/1.3693427

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

Chris J Hodges, Nicole Killat, S. W. Kaun, M. H. Wong, F. Gao, T. Palacios, U. K. Mishra, J. S. Speck, D. Wolverson, M Kuball

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

33 Citations (Scopus)

402 Downloads (Pure)

Abstract

Degradation mechanisms in AlGaN/GaN high electron mobility transistors (HEMTs) have been studied under pinch-off conditions. Sites of localized emission of electroluminescence (EL) in the form of hotspots, known to be related to gate leakage currents, are shown to be the result of the generation of non-radiative recombination centers in the AlGaN device layer during device stress. EL from the hotspot site contains both hot-carrier emission from the acceleration of charge carriers in the device channel, and defect-related transitions. Gate leakage through the generated centers is the most likely mechanism for the observation of EL hotspots.

Translated title of the contribution	Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers
Original language	English
Article number	112106
Number of pages	4
Journal	Applied Physics Letters
Volume	100
Issue number	11
DOIs	https://doi.org/10.1063/1.3693427
Publication status	Published - 13 Mar 2012

Bibliographical note

Publisher: AIP
Rose publication type: Article

Sponsorship: The University of Bristol gratefully acknowledges funding from the Engineering and Physical
Sciences Research Council (EPSRC), and the Office of Naval Research and ONR Global under N00014-08-1-1091 through the DRIFT program (monitored by Dr. Paul Maki).

Terms of use: Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Research Groups and Themes

CDTR

Keywords

AlGaN/GaN HEMTs
photoluminescence
electroluminescence
hotspots

Access to Document

10.1063/1.3693427

Full-text PDF (accepted author manuscript)Accepted author manuscript, 1.41 MB

Handle.net

Persistent link

Cite this

Hodges, C. J., Killat, N., Kaun, S. W., Wong, M. H., Gao, F., Palacios, T., Mishra, U. K., Speck, J. S., Wolverson, D., & Kuball, M. (2012). Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers. Applied Physics Letters, 100(11), Article 112106. https://doi.org/10.1063/1.3693427

@article{0967cc71dd894faa838d8dc9a7414be1,

title = "Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers",

abstract = "Degradation mechanisms in AlGaN/GaN high electron mobility transistors (HEMTs) have been studied under pinch-off conditions. Sites of localized emission of electroluminescence (EL) in the form of hotspots, known to be related to gate leakage currents, are shown to be the result of the generation of non-radiative recombination centers in the AlGaN device layer during device stress. EL from the hotspot site contains both hot-carrier emission from the acceleration of charge carriers in the device channel, and defect-related transitions. Gate leakage through the generated centers is the most likely mechanism for the observation of EL hotspots.",

keywords = "AlGaN/GaN HEMTs, photoluminescence, electroluminescence, hotspots",

author = "Hodges, {Chris J} and Nicole Killat and Kaun, {S. W.} and Wong, {M. H.} and F. Gao and T. Palacios and Mishra, {U. K.} and Speck, {J. S.} and D. Wolverson and M Kuball",

note = "Publisher: AIP Rose publication type: Article Sponsorship: The University of Bristol gratefully acknowledges funding from the Engineering and Physical Sciences Research Council (EPSRC), and the Office of Naval Research and ONR Global under N00014-08-1-1091 through the DRIFT program (monitored by Dr. Paul Maki). Terms of use: Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. ",

year = "2012",

month = mar,

day = "13",

doi = "10.1063/1.3693427",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "11",

}

TY - JOUR

T1 - Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors

T2 - Generation of non-radiative recombination centers

AU - Hodges, Chris J

AU - Killat, Nicole

AU - Kaun, S. W.

AU - Wong, M. H.

AU - Gao, F.

AU - Palacios, T.

AU - Mishra, U. K.

AU - Speck, J. S.

AU - Wolverson, D.

AU - Kuball, M

N1 - Publisher: AIP Rose publication type: Article Sponsorship: The University of Bristol gratefully acknowledges funding from the Engineering and Physical Sciences Research Council (EPSRC), and the Office of Naval Research and ONR Global under N00014-08-1-1091 through the DRIFT program (monitored by Dr. Paul Maki). Terms of use: Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2012/3/13

Y1 - 2012/3/13

N2 - Degradation mechanisms in AlGaN/GaN high electron mobility transistors (HEMTs) have been studied under pinch-off conditions. Sites of localized emission of electroluminescence (EL) in the form of hotspots, known to be related to gate leakage currents, are shown to be the result of the generation of non-radiative recombination centers in the AlGaN device layer during device stress. EL from the hotspot site contains both hot-carrier emission from the acceleration of charge carriers in the device channel, and defect-related transitions. Gate leakage through the generated centers is the most likely mechanism for the observation of EL hotspots.

AB - Degradation mechanisms in AlGaN/GaN high electron mobility transistors (HEMTs) have been studied under pinch-off conditions. Sites of localized emission of electroluminescence (EL) in the form of hotspots, known to be related to gate leakage currents, are shown to be the result of the generation of non-radiative recombination centers in the AlGaN device layer during device stress. EL from the hotspot site contains both hot-carrier emission from the acceleration of charge carriers in the device channel, and defect-related transitions. Gate leakage through the generated centers is the most likely mechanism for the observation of EL hotspots.

KW - AlGaN/GaN HEMTs

KW - photoluminescence

KW - electroluminescence

KW - hotspots

U2 - 10.1063/1.3693427

DO - 10.1063/1.3693427

M3 - Article (Academic Journal)

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112106

ER -

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

Abstract

Bibliographical note

Research Groups and Themes

Keywords

Access to Document

Handle.net

Fingerprint

Cite this