Abstract
Optical RAM appears to be the alternative approach towards overcoming the 'Memory Wall' of electronics, suggesting the use of light in RAM cell mechanisms to enable memory access times in the psec-regime. In this paper we present our recent work on optical RAM cell configurations relying on SOA-based switching and latching elements. We review both their experimental and theoretical framework and discuss on the new architectural perspectives in RAM encoding/decoding structures by introducing the WDM principles in the storage area.
Original language | English |
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Title of host publication | 2012 International Conference on Photonics in Switching, PS 2012 |
Publication status | Published - 1 Dec 2012 |
Event | 2012 International Conference on Photonics in Switching, PS 2012 - Ajaccio, France Duration: 11 Sept 2012 → 14 Sept 2012 |
Conference
Conference | 2012 International Conference on Photonics in Switching, PS 2012 |
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Country/Territory | France |
City | Ajaccio |
Period | 11/09/12 → 14/09/12 |
Keywords
- Access Bit
- Access gate
- Cross Gain/Phase Modulation
- Optical memory
- RAM architectures
- RAM cell
- Semiconductor Optical Amplifier