Optical static RAM cell using a monolithically integrated InP Flip-Flop and wavelength-encoded signals

S. Pitris, C. Vagionas, G. T. Kanellos, R. Kisacik, T. Tekin, R. Broeke, N. Pleros

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

2 Citations (Scopus)

Abstract

We experimentally demonstrate successful optical static RAM cell operation with READ/WRITE at 5Gbps and I/O wavelength diversity capabilities. The RAM cell incorporates an integrated SOA-MZI Access Gate and a monolithic InP Flip-Flop with coupled switches.

Original languageEnglish
Title of host publication2016 Optical Fiber Communications Conference and Exhibition, OFC 2016
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISBN (Electronic)9781943580071
Publication statusPublished - 9 Aug 2016
Event2016 Optical Fiber Communications Conference and Exhibition, OFC 2016 - Anaheim, United States
Duration: 20 Mar 201624 Mar 2016

Conference

Conference2016 Optical Fiber Communications Conference and Exhibition, OFC 2016
CountryUnited States
CityAnaheim
Period20/03/1624/03/16

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