Optically Controlled Millimeter-wave Switch with Stepped-Impedance Lines

Yutian Zhang; Weiran Pang; Martin Cryan

doi:10.1049/iet-map.2018.6191

Optically Controlled Millimeter-wave Switch with Stepped-Impedance Lines

Yutian Zhang, Weiran Pang, Martin Cryan

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Abstract

A photoconductive grounded coplanar waveguide (GCPW) millimeter-wave switch controlled by a single infrared light emitting diode (LED) is presented. By converting a straight GCPW transmission line into an alternating steppedimpedance line structure, the proposed device shows an on-state insertion loss of less than 2.9 dB and an off-state isolation of more than 15 dB over a wide frequency range of 12-30 GHz, with a particularly good RF performance in the K band (18-27 GHz). The required optical power and electrical power of the switch are only 199 mW and 364 mW, repectively. This device also demonstrates an absorptive characteristic with a low reflection coefficient of less than -13.5 dB within this frequency range for both the on and off states. In addition, by employing through-holes for illumination of a silicon superstrate, the proposed device can be fabricated with rapid and low-cost laser-etching and can be easily integrated with other microwave and millimeter-wave circuits.

Original language	English
Journal	IET Microwaves, Antennas and Propagation
Early online date	7 May 2019
DOIs	https://doi.org/10.1049/iet-map.2018.6191
Publication status	E-pub ahead of print - 7 May 2019

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title = "Optically Controlled Millimeter-wave Switch with Stepped-Impedance Lines",

abstract = "A photoconductive grounded coplanar waveguide (GCPW) millimeter-wave switch controlled by a single infrared light emitting diode (LED) is presented. By converting a straight GCPW transmission line into an alternating steppedimpedance line structure, the proposed device shows an on-state insertion loss of less than 2.9 dB and an off-state isolation of more than 15 dB over a wide frequency range of 12-30 GHz, with a particularly good RF performance in the K band (18-27 GHz). The required optical power and electrical power of the switch are only 199 mW and 364 mW, repectively. This device also demonstrates an absorptive characteristic with a low reflection coefficient of less than -13.5 dB within this frequency range for both the on and off states. In addition, by employing through-holes for illumination of a silicon superstrate, the proposed device can be fabricated with rapid and low-cost laser-etching and can be easily integrated with other microwave and millimeter-wave circuits.",

author = "Yutian Zhang and Weiran Pang and Martin Cryan",

year = "2019",

month = may,

day = "7",

doi = "10.1049/iet-map.2018.6191",

language = "English",

journal = "IET Microwaves, Antennas and Propagation",

issn = "1751-8725",

publisher = "Institution of Engineering and Technology (IET)",

}

TY - JOUR

T1 - Optically Controlled Millimeter-wave Switch with Stepped-Impedance Lines

AU - Zhang, Yutian

AU - Pang, Weiran

AU - Cryan, Martin

PY - 2019/5/7

Y1 - 2019/5/7

N2 - A photoconductive grounded coplanar waveguide (GCPW) millimeter-wave switch controlled by a single infrared light emitting diode (LED) is presented. By converting a straight GCPW transmission line into an alternating steppedimpedance line structure, the proposed device shows an on-state insertion loss of less than 2.9 dB and an off-state isolation of more than 15 dB over a wide frequency range of 12-30 GHz, with a particularly good RF performance in the K band (18-27 GHz). The required optical power and electrical power of the switch are only 199 mW and 364 mW, repectively. This device also demonstrates an absorptive characteristic with a low reflection coefficient of less than -13.5 dB within this frequency range for both the on and off states. In addition, by employing through-holes for illumination of a silicon superstrate, the proposed device can be fabricated with rapid and low-cost laser-etching and can be easily integrated with other microwave and millimeter-wave circuits.

AB - A photoconductive grounded coplanar waveguide (GCPW) millimeter-wave switch controlled by a single infrared light emitting diode (LED) is presented. By converting a straight GCPW transmission line into an alternating steppedimpedance line structure, the proposed device shows an on-state insertion loss of less than 2.9 dB and an off-state isolation of more than 15 dB over a wide frequency range of 12-30 GHz, with a particularly good RF performance in the K band (18-27 GHz). The required optical power and electrical power of the switch are only 199 mW and 364 mW, repectively. This device also demonstrates an absorptive characteristic with a low reflection coefficient of less than -13.5 dB within this frequency range for both the on and off states. In addition, by employing through-holes for illumination of a silicon superstrate, the proposed device can be fabricated with rapid and low-cost laser-etching and can be easily integrated with other microwave and millimeter-wave circuits.

U2 - 10.1049/iet-map.2018.6191

DO - 10.1049/iet-map.2018.6191

M3 - Article (Academic Journal)

JO - IET Microwaves, Antennas and Propagation

JF - IET Microwaves, Antennas and Propagation

SN - 1751-8725

ER -

Optically Controlled Millimeter-wave Switch with Stepped-Impedance Lines

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