Abstract
We use evaporated C-60 as the emitter in a vertical transistor structure with Au base and Si collector. The proportion of emitted electrons that overcome the barrier is measured as at least 0.99. Our metal-base transistor is easy to fabricate as it does not involve wafer bonding or require perfect semiconductor-on-metal growth.
Translated title of the contribution | Organic-metal-semiconductor transistor with high gain |
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Original language | English |
Pages (from-to) | 3978 - 3980 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 84 (20) |
DOIs | |
Publication status | Published - 17 May 2004 |