Organic-metal-semiconductor transistor with high gain

MS Meruvia, IA Hümmelgen, ML Sartorelli, AA Pasa, W Schwarzacher

Research output: Contribution to journalArticle (Academic Journal)peer-review

40 Citations (Scopus)

Abstract

We use evaporated C-60 as the emitter in a vertical transistor structure with Au base and Si collector. The proportion of emitted electrons that overcome the barrier is measured as at least 0.99. Our metal-base transistor is easy to fabricate as it does not involve wafer bonding or require perfect semiconductor-on-metal growth.
Translated title of the contributionOrganic-metal-semiconductor transistor with high gain
Original languageEnglish
Pages (from-to)3978 - 3980
Number of pages3
JournalApplied Physics Letters
Volume84 (20)
DOIs
Publication statusPublished - 17 May 2004

Bibliographical note

Publisher: American Institute of Physics

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