Abstract
We use evaporated C-60 as the emitter in a vertical transistor structure with Au base and Si collector. The proportion of emitted electrons that overcome the barrier is measured as at least 0.99. Our metal-base transistor is easy to fabricate as it does not involve wafer bonding or require perfect semiconductor-on-metal growth.
| Translated title of the contribution | Organic-metal-semiconductor transistor with high gain |
|---|---|
| Original language | English |
| Pages (from-to) | 3978 - 3980 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 84 (20) |
| DOIs | |
| Publication status | Published - 17 May 2004 |