Organic-metal-semiconductor transistor with high gain

MS Meruvia; IA Hümmelgen; ML Sartorelli; AA Pasa; W Schwarzacher

doi:10.1063/1.1751218

Organic-metal-semiconductor transistor with high gain

MS Meruvia
, IA Hümmelgen
, ML Sartorelli
, AA Pasa
, W Schwarzacher

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

42 Citations (Scopus)

Abstract

We use evaporated C-60 as the emitter in a vertical transistor structure with Au base and Si collector. The proportion of emitted electrons that overcome the barrier is measured as at least 0.99. Our metal-base transistor is easy to fabricate as it does not involve wafer bonding or require perfect semiconductor-on-metal growth.

Translated title of the contribution	Organic-metal-semiconductor transistor with high gain
Original language	English
Pages (from-to)	3978 - 3980
Number of pages	3
Journal	Applied Physics Letters
Volume	84 (20)
DOIs	https://doi.org/10.1063/1.1751218
Publication status	Published - 17 May 2004

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Publisher: American Institute of Physics

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@article{a7f5c15be6e144378fba6f1e66a10ecb,

title = "Organic-metal-semiconductor transistor with high gain",

abstract = "We use evaporated C-60 as the emitter in a vertical transistor structure with Au base and Si collector. The proportion of emitted electrons that overcome the barrier is measured as at least 0.99. Our metal-base transistor is easy to fabricate as it does not involve wafer bonding or require perfect semiconductor-on-metal growth.",

author = "MS Meruvia and IA H{\"u}mmelgen and ML Sartorelli and AA Pasa and W Schwarzacher",

note = "Publisher: American Institute of Physics",

year = "2004",

month = may,

day = "17",

doi = "10.1063/1.1751218",

language = "English",

volume = "84 (20)",

pages = "3978 -- 3980",

journal = "Applied Physics Letters",

issn = "1077-3118",

publisher = "American Institute of Physics (AIP)",

}

TY - JOUR

T1 - Organic-metal-semiconductor transistor with high gain

AU - Meruvia, MS

AU - Hümmelgen, IA

AU - Sartorelli, ML

AU - Pasa, AA

AU - Schwarzacher, W

N1 - Publisher: American Institute of Physics

PY - 2004/5/17

Y1 - 2004/5/17

N2 - We use evaporated C-60 as the emitter in a vertical transistor structure with Au base and Si collector. The proportion of emitted electrons that overcome the barrier is measured as at least 0.99. Our metal-base transistor is easy to fabricate as it does not involve wafer bonding or require perfect semiconductor-on-metal growth.

AB - We use evaporated C-60 as the emitter in a vertical transistor structure with Au base and Si collector. The proportion of emitted electrons that overcome the barrier is measured as at least 0.99. Our metal-base transistor is easy to fabricate as it does not involve wafer bonding or require perfect semiconductor-on-metal growth.

U2 - 10.1063/1.1751218

DO - 10.1063/1.1751218

M3 - Article (Academic Journal)

SN - 1077-3118

VL - 84 (20)

SP - 3978

EP - 3980

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Organic-metal-semiconductor transistor with high gain

Abstract

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