Abstract
Transconductance roll-off at high gate bias is an issue
in mmWave AlGaN/GaN HEMTs, resulting in reduction of current gain cut-off frequency, fT and degradation in linearity. In this work, the cause of this effect is
investigated by comparing competing source starvation and hot phonon scattering models in TCAD simulations. Simulation of a GaN HEMT with a 100 nm gate length
and recessed contact suggests that the device characteristics could be better explained by the source starvation model. This work highlights the importance of including source starvation effects in the design of device and optimization of RF device characteristics.
in mmWave AlGaN/GaN HEMTs, resulting in reduction of current gain cut-off frequency, fT and degradation in linearity. In this work, the cause of this effect is
investigated by comparing competing source starvation and hot phonon scattering models in TCAD simulations. Simulation of a GaN HEMT with a 100 nm gate length
and recessed contact suggests that the device characteristics could be better explained by the source starvation model. This work highlights the importance of including source starvation effects in the design of device and optimization of RF device characteristics.
| Original language | English |
|---|---|
| Number of pages | 4 |
| Publication status | Published - 2023 |
| Event | 2023 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2023 - Orlando, FL, United States - Orlando, United States Duration: 15 May 2023 → 18 May 2023 https://csmantech.org/ |
Conference
| Conference | 2023 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2023 - Orlando, FL, United States |
|---|---|
| Abbreviated title | CS MANTECH 2023 |
| Country/Territory | United States |
| City | Orlando |
| Period | 15/05/23 → 18/05/23 |
| Internet address |
Research Groups and Themes
- CDTR