Abstract
The authors use simple analytical models to investigate the oscillator strengths of both free and bound excitons in quantum wells and compare them to their values in the bulk semiconductor. For free excitons in quantum wells it is found that compression of the wavefunction yields a 1/L dependence of the oscillator strength on well width L for narrow wells producing an enhancement of the free exciton oscillator strength. The oscillator strength of bound excitons in quantum wells is found to be decreased slightly from the bulk semiconductor value
| Translated title of the contribution | Oscillator strengths for excitons in quantum wells: free or bound to impurities |
|---|---|
| Original language | English |
| Pages (from-to) | 423 - 426 |
| Number of pages | 4 |
| Journal | Superlattices and Microstructures |
| Volume | 1 (5) |
| Publication status | Published - 1985 |