Oxygen DX center in In0.17Al0.83N: Nonradiative recombination and persistent photoconductivity

Rocco Meli, Giacomo Miceli, Alfredo Pasquarello

Research output: Contribution to journalArticle (Academic Journal)peer-review

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Abstract

Using a hybrid density-functional scheme, we address the O impurity substitutional to N (ON) in In0.17Al0.83N. Our modelling supports In clustering to account for the strong band-gap bowing observed in InxAl1−xN alloys. To study the ON defect in In0.17Al0.83N alloys, we therefore consider a model containing an In cluster and find that the most stable configuration shows four In nearest neighbors. We show that such a ON defect forms a DX center and gives rise to two defect levels at 0.70 and 0.41 eV below the conduction band edge, in good agreement with experiment. The calculated defect energetics entail a fast nonradiative recombination upon photoexcitation at room temperature and account for the observation of persistent photoconductivity at low temperature.

Original languageEnglish
Article number072101
Number of pages4
JournalApplied Physics Letters
Volume110
Issue number7
Early online date13 Feb 2017
DOIs
Publication statusPublished - 13 Feb 2018

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