Oxygen segregation to nanopipes in gallium nitride

ME Hawkridge, D Cherns

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

The formation of nanopipes in GaN has been linked to impurity segregation. In this paper, a combination of high angle annular dark field imaging and electron energy loss spectroscopy in the Daresbury SuperSTEM is used to investigate the core structure and composition of open core dislocations (nanopipes) in GaN films grown by hydride vapour phase epitaxy. The results show evidence for segregation of oxygen to the nanopipe surfaces. Quantitative analysis suggests that up to several monolayers of nitrogen can be replaced by oxygen. The implications of these results for understanding the electrical properties and core structure of dislocations in GaN are discussed.
Translated title of the contributionOxygen segregation to nanopipes in gallium nitride
Original languageEnglish
Title of host publicationMicroscopy of Semiconducting Materials
Subtitle of host publicationProceedings of the 14th Conference, April 11–14, 2005, Oxford, UK
PublisherSpringer Berlin Heidelberg
Pages45 - 51
Number of pages6
DOIs
Publication statusPublished - 2005

Publication series

NameSpringer Proceedings in Physics
Volume107

Bibliographical note

Editors: Cullis AG, Hutchison JL
Publisher: Springer-Verlag, Berlin
Name and Venue of Conference: Int. Conf. on Microscopy of Semiconducting Materials, 11-14 April 2005
Conference Organiser: Royal Microscop Soc; Inst. Phys, Elect. Microscopy & Anal. Grp; Mat Res Soc

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  • Cite this

    Hawkridge, ME., & Cherns, D. (2005). Oxygen segregation to nanopipes in gallium nitride. In Microscopy of Semiconducting Materials: Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK (pp. 45 - 51). (Springer Proceedings in Physics; Vol. 107). Springer Berlin Heidelberg. https://doi.org/10.1007/3-540-31915-8_8