Oxygen segregation to nanopipes in gallium nitride

ME Hawkridge; D Cherns

doi:10.1007/3-540-31915-8_8

Oxygen segregation to nanopipes in gallium nitride

ME Hawkridge, D Cherns

School of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Abstract

The formation of nanopipes in GaN has been linked to impurity segregation. In this paper, a combination of high angle annular dark field imaging and electron energy loss spectroscopy in the Daresbury SuperSTEM is used to investigate the core structure and composition of open core dislocations (nanopipes) in GaN films grown by hydride vapour phase epitaxy. The results show evidence for segregation of oxygen to the nanopipe surfaces. Quantitative analysis suggests that up to several monolayers of nitrogen can be replaced by oxygen. The implications of these results for understanding the electrical properties and core structure of dislocations in GaN are discussed.

Translated title of the contribution	Oxygen segregation to nanopipes in gallium nitride
Original language	English
Title of host publication	Microscopy of Semiconducting Materials
Subtitle of host publication	Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK
Publisher	Springer Berlin Heidelberg
Pages	45 - 51
Number of pages	6
DOIs	https://doi.org/10.1007/3-540-31915-8_8
Publication status	Published - 2005

Publication series

Name	Springer Proceedings in Physics
Volume	107

Bibliographical note

Editors: Cullis AG, Hutchison JL
Publisher: Springer-Verlag, Berlin
Name and Venue of Conference: Int. Conf. on Microscopy of Semiconducting Materials, 11-14 April 2005
Conference Organiser: Royal Microscop Soc; Inst. Phys, Elect. Microscopy & Anal. Grp; Mat Res Soc

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@inproceedings{ed302059f7734a07a373c504430a1cad,

title = "Oxygen segregation to nanopipes in gallium nitride",

abstract = "The formation of nanopipes in GaN has been linked to impurity segregation. In this paper, a combination of high angle annular dark field imaging and electron energy loss spectroscopy in the Daresbury SuperSTEM is used to investigate the core structure and composition of open core dislocations (nanopipes) in GaN films grown by hydride vapour phase epitaxy. The results show evidence for segregation of oxygen to the nanopipe surfaces. Quantitative analysis suggests that up to several monolayers of nitrogen can be replaced by oxygen. The implications of these results for understanding the electrical properties and core structure of dislocations in GaN are discussed.",

author = "ME Hawkridge and D Cherns",

note = "Editors: Cullis AG, Hutchison JL Publisher: Springer-Verlag, Berlin Name and Venue of Conference: Int. Conf. on Microscopy of Semiconducting Materials, 11-14 April 2005 Conference Organiser: Royal Microscop Soc; Inst. Phys, Elect. Microscopy & Anal. Grp; Mat Res Soc",

year = "2005",

doi = "10.1007/3-540-31915-8_8",

language = "English",

series = "Springer Proceedings in Physics",

publisher = "Springer Berlin Heidelberg",

pages = "45 -- 51",

booktitle = "Microscopy of Semiconducting Materials",

address = "Germany",

}

Oxygen segregation to nanopipes in gallium nitride. / Hawkridge, ME; Cherns, D.
Microscopy of Semiconducting Materials: Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK. Springer Berlin Heidelberg, 2005. p. 45 - 51 (Springer Proceedings in Physics; Vol. 107).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Oxygen segregation to nanopipes in gallium nitride

AU - Hawkridge, ME

AU - Cherns, D

N1 - Editors: Cullis AG, Hutchison JL Publisher: Springer-Verlag, Berlin Name and Venue of Conference: Int. Conf. on Microscopy of Semiconducting Materials, 11-14 April 2005 Conference Organiser: Royal Microscop Soc; Inst. Phys, Elect. Microscopy & Anal. Grp; Mat Res Soc

PY - 2005

Y1 - 2005

N2 - The formation of nanopipes in GaN has been linked to impurity segregation. In this paper, a combination of high angle annular dark field imaging and electron energy loss spectroscopy in the Daresbury SuperSTEM is used to investigate the core structure and composition of open core dislocations (nanopipes) in GaN films grown by hydride vapour phase epitaxy. The results show evidence for segregation of oxygen to the nanopipe surfaces. Quantitative analysis suggests that up to several monolayers of nitrogen can be replaced by oxygen. The implications of these results for understanding the electrical properties and core structure of dislocations in GaN are discussed.

AB - The formation of nanopipes in GaN has been linked to impurity segregation. In this paper, a combination of high angle annular dark field imaging and electron energy loss spectroscopy in the Daresbury SuperSTEM is used to investigate the core structure and composition of open core dislocations (nanopipes) in GaN films grown by hydride vapour phase epitaxy. The results show evidence for segregation of oxygen to the nanopipe surfaces. Quantitative analysis suggests that up to several monolayers of nitrogen can be replaced by oxygen. The implications of these results for understanding the electrical properties and core structure of dislocations in GaN are discussed.

U2 - 10.1007/3-540-31915-8_8

DO - 10.1007/3-540-31915-8_8

M3 - Conference Contribution (Conference Proceeding)

T3 - Springer Proceedings in Physics

SP - 45

EP - 51

BT - Microscopy of Semiconducting Materials

PB - Springer Berlin Heidelberg

ER -

Oxygen segregation to nanopipes in gallium nitride

Abstract

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