p-type metal-base transistor

RG Delatorre, ML Munford, R Zandonay, VC Zoldan, AA Pasa, W Schwarzacher, MS Meruvia, IA Hummelgen

Research output: Contribution to journalArticle (Academic Journal)peer-review

21 Citations (Scopus)

Abstract

In this work we present data from a novel p-type metal-base transistor with common-base gain alpha similar to 1, fabricated at ambient temperature and pressure by electrodepositing sequentially on a p-type Si collector, a Co base and a Cu2O emitter. The high gain and the dependence of potential between emitter and base (V-EB) on the potential between collector and base (V-CB) when the emitter current (I-E) is held constant both suggest that the device functions as a natural permeable base transistor for very thin metal bases.
Translated title of the contributionp-type metal-base transistor
Original languageEnglish
Pages (from-to)233504-1 - 233504-3
Number of pages3
JournalApplied Physics Letters
Volume88(23)
DOIs
Publication statusPublished - Jun 2006

Bibliographical note

Publisher: American Institute of Physics

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