p-type metal-base transistor

RG Delatorre; ML Munford; R Zandonay; VC Zoldan; AA Pasa; W Schwarzacher; MS Meruvia; IA Hummelgen

doi:10.1063/1.2202825

p-type metal-base transistor

RG Delatorre, ML Munford, R Zandonay, VC Zoldan, AA Pasa, W Schwarzacher, MS Meruvia, IA Hummelgen

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

23 Citations (Scopus)

Abstract

In this work we present data from a novel p-type metal-base transistor with common-base gain alpha similar to 1, fabricated at ambient temperature and pressure by electrodepositing sequentially on a p-type Si collector, a Co base and a Cu2O emitter. The high gain and the dependence of potential between emitter and base (V-EB) on the potential between collector and base (V-CB) when the emitter current (I-E) is held constant both suggest that the device functions as a natural permeable base transistor for very thin metal bases.

Translated title of the contribution	p-type metal-base transistor
Original language	English
Pages (from-to)	233504-1 - 233504-3
Number of pages	3
Journal	Applied Physics Letters
Volume	88(23)
DOIs	https://doi.org/10.1063/1.2202825
Publication status	Published - Jun 2006

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Publisher: American Institute of Physics

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title = "p-type metal-base transistor",

abstract = "In this work we present data from a novel p-type metal-base transistor with common-base gain alpha similar to 1, fabricated at ambient temperature and pressure by electrodepositing sequentially on a p-type Si collector, a Co base and a Cu2O emitter. The high gain and the dependence of potential between emitter and base (V-EB) on the potential between collector and base (V-CB) when the emitter current (I-E) is held constant both suggest that the device functions as a natural permeable base transistor for very thin metal bases.",

author = "RG Delatorre and ML Munford and R Zandonay and VC Zoldan and AA Pasa and W Schwarzacher and MS Meruvia and IA Hummelgen",

note = "Publisher: American Institute of Physics",

year = "2006",

month = jun,

doi = "10.1063/1.2202825",

language = "English",

volume = "88(23)",

pages = "233504--1 -- 233504--3",

journal = "Applied Physics Letters",

issn = "1077-3118",

publisher = "American Institute of Physics (AIP)",

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TY - JOUR

T1 - p-type metal-base transistor

AU - Delatorre, RG

AU - Munford, ML

AU - Zandonay, R

AU - Zoldan, VC

AU - Pasa, AA

AU - Schwarzacher, W

AU - Meruvia, MS

AU - Hummelgen, IA

N1 - Publisher: American Institute of Physics

PY - 2006/6

Y1 - 2006/6

N2 - In this work we present data from a novel p-type metal-base transistor with common-base gain alpha similar to 1, fabricated at ambient temperature and pressure by electrodepositing sequentially on a p-type Si collector, a Co base and a Cu2O emitter. The high gain and the dependence of potential between emitter and base (V-EB) on the potential between collector and base (V-CB) when the emitter current (I-E) is held constant both suggest that the device functions as a natural permeable base transistor for very thin metal bases.

AB - In this work we present data from a novel p-type metal-base transistor with common-base gain alpha similar to 1, fabricated at ambient temperature and pressure by electrodepositing sequentially on a p-type Si collector, a Co base and a Cu2O emitter. The high gain and the dependence of potential between emitter and base (V-EB) on the potential between collector and base (V-CB) when the emitter current (I-E) is held constant both suggest that the device functions as a natural permeable base transistor for very thin metal bases.

U2 - 10.1063/1.2202825

DO - 10.1063/1.2202825

M3 - Article (Academic Journal)

SN - 1077-3118

VL - 88(23)

SP - 233504-1 - 233504-3

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

p-type metal-base transistor

Abstract

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