Performance and Reliability Review of 650V and 900V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

J. Ortiz Gonzalez, Robert Wu, Saeed Jahdi, Olayiwola Alatise

Research output: Contribution to journalArticle (Academic Journal)peer-review

24 Citations (Scopus)
139 Downloads (Pure)

Abstract

The future of power conversion at medium voltages (around 650V) poses a very interesting debate. At low automotive voltages (below 100V), the silicon MOSFET
reigns supreme and at the higher end of the medium voltage application spectrum (approximately 1 kV and above) the SiC power MOSFET looks set to topple the dominance of the silicon IGBT. At very high voltages (4.5 kV, 6.5 kV and above) used for grid applications, the presspack thyristor remains undisputed for current source converters and the press-pack IGBTs for voltage source converters. However, around 600 V, there does not seem to be a clear choice with all the major device manufacturers releasing different technology variants ranging from SiC Trench MOSFETs, SiC Planar MOSFETs, cascode-driven
WBG FETs, silicon NPT and Field-stop IGBTs, silicon super-junction MOSFETs, standard silicon MOSFETs and enhancement mode GaN HEMTs. Each technology comes with its unique selling point with GaN being well known for ultra-high speed and compact integration, SiC is well known for high temperature, electro-thermal ruggedness and fast switching while silicon remains clearly dominant
in cost and proven reliability. This review comparatively assesses the performance of some of these technologies, investigates their body diodes, discusses device reliability and avalanche ruggedness.
Original languageEnglish
JournalIEEE Transactions on Industrial Electronics
Early online date8 Oct 2019
DOIs
Publication statusE-pub ahead of print - 8 Oct 2019

Keywords

  • Body diode
  • Cascode
  • SiC MOSFET
  • Wide bandgap devices
  • Reliability
  • Switching Energy

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