Performance Instability of 650 V p-GaN Gate HEMT Device under Temperature-related Positive Gate Bias Stresses

Renze Yu; Saeed Jahdi; Phil H Mellor; Jose Angel Ortiz Gonzalez; Olayiwola Alatise

doi:10.30420/566262087

Performance Instability of 650 V p-GaN Gate HEMT Device under Temperature-related Positive Gate Bias Stresses

Renze Yu^*, Saeed Jahdi, Phil H Mellor, Jose Angel Ortiz Gonzalez, Olayiwola Alatise

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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Abstract

In this work, the effects of positive gate stresses on threshold voltage (Vth) and on-state resistance (Ron) instability of the 650 V Schottky p-GaN gate HEMT devices were investigated under different gate bias stresses and a wide temperature range. It is noticed that once the stress was applied, there was an immediate Vth jump. The drift magnitude and direction of Vth and Ron during the stressing tests were largely dependent on the applied Vgs bias. The temperature had a significant impact on static parameters. The variations in Vth (DeltaVth) demonstrated an overall decreasing trend with the progress of experiment under the positive gate stress of 6 V. The initial DeltaVth jump increased with temperature at first and then reduced at certain temperatures. The variation in Ron (DeltaRon) caused by the positive gate bias of 6 V was minor at temperatures below zero, but it became more pronounced with the increase in temperature.

Original language	English
Title of host publication	PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
Place of Publication	Nürnberg, Germany
Publisher	VDE Verlag
Pages	717-722
Number of pages	6
ISBN (Print)	9783800762620
DOIs	https://doi.org/10.30420/566262087
Publication status	Published - 29 Aug 2024
Event	International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2024 - Nürnberg, Germany Duration: 11 Jun 2024 → 13 Jun 2024 https://pcim.mesago.com/nuernberg/en.html

Publication series

Name	Proceedings (PCIM Europe)
Publisher	VDE
ISSN (Electronic)	2191-3358

Conference

Conference	International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2024
Abbreviated title	PCIM Europe 2024
Country/Territory	Germany
City	Nürnberg
Period	11/06/24 → 13/06/24
Internet address	https://pcim.mesago.com/nuernberg/en.html

Bibliographical note

Publisher Copyright:
© VDE VERLAG GMBH · Berlin · Offenbach.

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10.30420/566262087

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Yu, R., Jahdi, S., Mellor, P. H., Ortiz Gonzalez, J. A., & Alatise, O. (2024). Performance Instability of 650 V p-GaN Gate HEMT Device under Temperature-related Positive Gate Bias Stresses. In PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (pp. 717-722). (Proceedings (PCIM Europe)). VDE Verlag. https://doi.org/10.30420/566262087

Yu, Renze ; Jahdi, Saeed ; Mellor, Phil H et al. / Performance Instability of 650 V p-GaN Gate HEMT Device under Temperature-related Positive Gate Bias Stresses. PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Nürnberg, Germany : VDE Verlag, 2024. pp. 717-722 (Proceedings (PCIM Europe)).

@inproceedings{579308d89eab48259dd2e6cf79648cbb,

title = "Performance Instability of 650 V p-GaN Gate HEMT Device under Temperature-related Positive Gate Bias Stresses",

abstract = "In this work, the effects of positive gate stresses on threshold voltage (Vth) and on-state resistance (Ron) instability of the 650 V Schottky p-GaN gate HEMT devices were investigated under different gate bias stresses and a wide temperature range. It is noticed that once the stress was applied, there was an immediate Vth jump. The drift magnitude and direction of Vth and Ron during the stressing tests were largely dependent on the applied Vgs bias. The temperature had a significant impact on static parameters. The variations in Vth (DeltaVth) demonstrated an overall decreasing trend with the progress of experiment under the positive gate stress of 6 V. The initial DeltaVth jump increased with temperature at first and then reduced at certain temperatures. The variation in Ron (DeltaRon) caused by the positive gate bias of 6 V was minor at temperatures below zero, but it became more pronounced with the increase in temperature.",

author = "Renze Yu and Saeed Jahdi and Mellor, {Phil H} and {Ortiz Gonzalez}, {Jose Angel} and Olayiwola Alatise",

note = "Publisher Copyright: {\textcopyright} VDE VERLAG GMBH · Berlin · Offenbach.; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2024, PCIM Europe 2024 ; Conference date: 11-06-2024 Through 13-06-2024",

year = "2024",

month = aug,

day = "29",

doi = "10.30420/566262087",

language = "English",

isbn = "9783800762620",

series = "Proceedings (PCIM Europe)",

publisher = "VDE Verlag",

pages = "717--722",

booktitle = "PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management",

url = "https://pcim.mesago.com/nuernberg/en.html",

}

Yu, R , Jahdi, S , Mellor, PH, Ortiz Gonzalez, JA & Alatise, O 2024, Performance Instability of 650 V p-GaN Gate HEMT Device under Temperature-related Positive Gate Bias Stresses. in PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Proceedings (PCIM Europe), VDE Verlag, Nürnberg, Germany, pp. 717-722, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2024, Nürnberg, Germany, 11/06/24. https://doi.org/10.30420/566262087

Performance Instability of 650 V p-GaN Gate HEMT Device under Temperature-related Positive Gate Bias Stresses. / Yu, Renze ; Jahdi, Saeed ; Mellor, Phil H et al.
PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Nürnberg, Germany: VDE Verlag, 2024. p. 717-722 (Proceedings (PCIM Europe)).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Performance Instability of 650 V p-GaN Gate HEMT Device under Temperature-related Positive Gate Bias Stresses

AU - Yu, Renze

AU - Jahdi, Saeed

AU - Mellor, Phil H

AU - Ortiz Gonzalez, Jose Angel

AU - Alatise, Olayiwola

PY - 2024/8/29

Y1 - 2024/8/29

N2 - In this work, the effects of positive gate stresses on threshold voltage (Vth) and on-state resistance (Ron) instability of the 650 V Schottky p-GaN gate HEMT devices were investigated under different gate bias stresses and a wide temperature range. It is noticed that once the stress was applied, there was an immediate Vth jump. The drift magnitude and direction of Vth and Ron during the stressing tests were largely dependent on the applied Vgs bias. The temperature had a significant impact on static parameters. The variations in Vth (DeltaVth) demonstrated an overall decreasing trend with the progress of experiment under the positive gate stress of 6 V. The initial DeltaVth jump increased with temperature at first and then reduced at certain temperatures. The variation in Ron (DeltaRon) caused by the positive gate bias of 6 V was minor at temperatures below zero, but it became more pronounced with the increase in temperature.

AB - In this work, the effects of positive gate stresses on threshold voltage (Vth) and on-state resistance (Ron) instability of the 650 V Schottky p-GaN gate HEMT devices were investigated under different gate bias stresses and a wide temperature range. It is noticed that once the stress was applied, there was an immediate Vth jump. The drift magnitude and direction of Vth and Ron during the stressing tests were largely dependent on the applied Vgs bias. The temperature had a significant impact on static parameters. The variations in Vth (DeltaVth) demonstrated an overall decreasing trend with the progress of experiment under the positive gate stress of 6 V. The initial DeltaVth jump increased with temperature at first and then reduced at certain temperatures. The variation in Ron (DeltaRon) caused by the positive gate bias of 6 V was minor at temperatures below zero, but it became more pronounced with the increase in temperature.

UR - https://pcim.mesago.com/nuernberg/en.html

UR - https://pcim.mesago.com/content/dam/messefrankfurt-mesago/pcim/2025/documents/doc/en/Table_Of_Content_Proceedings_2024.pdf

U2 - 10.30420/566262087

DO - 10.30420/566262087

M3 - Conference Contribution (Conference Proceeding)

SN - 9783800762620

T3 - Proceedings (PCIM Europe)

SP - 717

EP - 722

BT - PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

PB - VDE Verlag

CY - Nürnberg, Germany

T2 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2024

Y2 - 11 June 2024 through 13 June 2024

ER -

Yu R , Jahdi S , Mellor PH, Ortiz Gonzalez JA, Alatise O. Performance Instability of 650 V p-GaN Gate HEMT Device under Temperature-related Positive Gate Bias Stresses. In PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Nürnberg, Germany: VDE Verlag. 2024. p. 717-722. (Proceedings (PCIM Europe)). doi: 10.30420/566262087

Performance Instability of 650 V p-GaN Gate HEMT Device under Temperature-related Positive Gate Bias Stresses

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