Performance of Wide-Bandgap Gallium Nitride vs Silicon Carbide Cascode Transistors

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Abstract

Wide-bandgap (WBG) cascodes combine the advantages of gate drivability and reliability of silicon MOSFETs with the conversion efficiency of WBG devices. In cascodes, a low voltage silicon MOSFET drives a vertical SiC JFET or a lateral GaN HEMT. This paper will present the first systematic comparison of the WBG cascodes considering static & dynamic performance, 3 rd quadrant operation and avalanche ruggedness, as well as the temperature sensitivities. The results show that the GaN cascode outperforms the SiC cascode in switching performance, however, demonstrates is more temperature sensitive at on-state. A model is developed to predict the dI DS /dt and its derivative against R G . Whilst turn-ON dI DS /dt and dV DS /dt have positive temperature coefficients in the SiC cascode and negative coefficients in the GaN cascode, the SiC cascode is more avalanche rugged, whereas the GaN cascode is incapable of unclamped inductive switching.
Original languageEnglish
Title of host publication2020 IEEE Energy Conversion Congress and Exposition (ECCE)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages239-245
ISBN (Print)9781728158266
DOIs
Publication statusPublished - 30 Oct 2020
Event12th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2020 - Virtual, Detroit, United States
Duration: 11 Oct 202015 Oct 2020

Publication series

Name
PublisherIEEE
ISSN (Print)2329-3721
ISSN (Electronic)2329-3748

Conference

Conference12th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2020
Country/TerritoryUnited States
CityVirtual, Detroit
Period11/10/2015/10/20

Keywords

  • Gallium nitride
  • Silicon carbide
  • Logic gates
  • HEMTs
  • Silicon
  • MOSFET
  • Switches

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