Performance of Wide-Bandgap Gallium Nitride vs Silicon Carbide Cascode Transistors

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Original language	English
Title of host publication	2020 IEEE Energy Conversion Congress and Exposition (ECCE)
DOIs	https://doi.org/10.1109/ecce44975.2020.9236187
Publication status	Published - 11 Oct 2020

Access to Document

@inproceedings{b25850546a5f4a498daf93765d3216bc,

title = "Performance of Wide-Bandgap Gallium Nitride vs Silicon Carbide Cascode Transistors",

author = "Saeed Jahdi",

year = "2020",

month = oct,

day = "11",

doi = "10.1109/ecce44975.2020.9236187",

language = "English",

isbn = "9781728158266",

booktitle = "2020 IEEE Energy Conversion Congress and Exposition (ECCE)",

}

TY - GEN

T1 - Performance of Wide-Bandgap Gallium Nitride vs Silicon Carbide Cascode Transistors

AU - Jahdi, Saeed

PY - 2020/10/11

Y1 - 2020/10/11

UR - http://dx.doi.org/10.1109/ecce44975.2020.9236187

U2 - 10.1109/ecce44975.2020.9236187

DO - 10.1109/ecce44975.2020.9236187

M3 - Conference Contribution (Conference Proceeding)

SN - 9781728158266

BT - 2020 IEEE Energy Conversion Congress and Exposition (ECCE)

ER -