Persistent template effect in InAs/GaAs quantum dot bilayers

E. Clarke*, P. Howe, M. Taylor, P. Spencer, E. Harbord, R. Murray, S. Kadkhodazadeh, D. W. McComb, B. J. Stevens, R. A. Hogg

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

22 Citations (Scopus)

Abstract

The dependence of the optical properties of InAs/GaAs quantum dot (QD) bilayers on seed layer growth temperature and second layer InAs coverage is investigated. As the seed layer growth temperature is increased, a low density of large QDs is obtained. This results in a concomitant increase in dot size in the second layer, which extends their emission wavelength, reaching a saturation value of around 1400 nm at room temperature for GaAs-capped bilayers. Capping the second dot layer with InGaAs results in a further extension of the emission wavelength, to 1515 nm at room temperature with a narrow linewidth of 22 meV. Addition of more InAs to high density bilayers does not result in a significant extension of emission wavelength as most additional material migrates to coalesced InAs islands but, in contrast to single layers, a substantial population of regular QDs remains.

Original languageEnglish
Article number113502
JournalJournal of Applied Physics
Volume107
Issue number11
DOIs
Publication statusPublished - 1 Jun 2010

Research Groups and Themes

  • Photonics and Quantum

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