Micro-Raman spectroscopy was applied to study the E-2(high) phonon deformation potentials in AlxGa1-xN material, which are required to convert phonon frequency shifts into stress values. AlxGa1-xN layers were grown by molecular beam epitaxy directly on (111)-oriented Si substrates. Mechanical bending was applied to introduce biaxial stress in the AlxGa1-xN layers and Raman shifts were measured as a function of the applied deformation. The Si phonon mode provided a reference for the applied stress and allowed determination of phonon deformation potential values for AlxGa1-xN. Deformation potentials of the GaN- and AlN-like E-2(high) phonon mode of AlGaN alloys were found to be similar to the corresponding values of binary compounds.
|Translated title of the contribution||Phonon deformation potentials of the E2(high) phonon mode of AlxGa1-xN|
|Pages (from-to)||2217 - 2219|
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2004|
Bibliographical notePublisher: American Institute of Physics