Phonon deformation potentials of the E2(high) phonon mode of AlxGa1-xN

A Sarua, M Kuball, JE van Nostrand

Research output: Contribution to journalArticle (Academic Journal)peer-review

12 Citations (Scopus)

Abstract

Micro-Raman spectroscopy was applied to study the E-2(high) phonon deformation potentials in AlxGa1-xN material, which are required to convert phonon frequency shifts into stress values. AlxGa1-xN layers were grown by molecular beam epitaxy directly on (111)-oriented Si substrates. Mechanical bending was applied to introduce biaxial stress in the AlxGa1-xN layers and Raman shifts were measured as a function of the applied deformation. The Si phonon mode provided a reference for the applied stress and allowed determination of phonon deformation potential values for AlxGa1-xN. Deformation potentials of the GaN- and AlN-like E-2(high) phonon mode of AlGaN alloys were found to be similar to the corresponding values of binary compounds.
Translated title of the contributionPhonon deformation potentials of the E2(high) phonon mode of AlxGa1-xN
Original languageEnglish
Pages (from-to)2217 - 2219
Number of pages3
JournalApplied Physics Letters
Volume85 (12)
Publication statusPublished - 2004

Bibliographical note

Publisher: American Institute of Physics

Structured keywords

  • CDTR

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