Phonon lifetimes and phonon decay in InN

JW Pomeroy, M Kuball, H Lu, WJ Schaff, X Wang, A Yoshikawa

Research output: Contribution to journalArticle (Academic Journal)peer-review

62 Citations (Scopus)

Abstract

We report on the Raman analysis of A(1)(LO) (longitudinal optical) and E-2 phonon lifetimes in InN and their temperature dependence from 80 to 700 K. Our experimental results show that among the various possible decay channels, the A(1)(LO) phonon decays asymmetrically into a high energy and a low energy phonon, whereas the E-2 phonon predominantly decays into three phonons. Possible decay channels of the A(1)(LO) phonon may involve combinations of transverse optical and acoustic phonons. Phonon lifetimes of 1.3 and 4 ps were measured at 80 K for the A(1)(LO) and the E-2 phonons, respectively. This rather long A(1)(LO) phonon lifetime suggests that hot phonon effects will play a role in InN for carrier relaxation.
Translated title of the contributionPhonon lifetimes and phonon decay in InN
Original languageEnglish
Pages (from-to)1 - 3
Number of pages3
JournalApplied Physics Letters
Volume86 (22) 223501
DOIs
Publication statusPublished - 30 May 2005

Bibliographical note

Publisher: American Institute of Physics

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