Photoluminescence and Raman scattering characterization of GaN, InGaN and AlGaN films ussing a UV excitation Raman-photoluminescence microscope

ZC Feng; M Schurman; CA Tran; T Salagaj; B Karlicek; I Ferguson; RA Stall; CD Dyer; KPJ Williams; GD Pitt

Photoluminescence and Raman scattering characterization of GaN, InGaN and AlGaN films ussing a UV excitation Raman-photoluminescence microscope

ZC Feng
, M Schurman
, CA Tran
, T Salagaj
, B Karlicek
, I Ferguson
, RA Stall
, CD Dyer
, KPJ Williams
, GD Pitt

University of Bristol

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Translated title of the contribution	Photoluminescence and Raman scattering characterization of GaN, InGaN and AlGaN films ussing a UV excitation Raman-photoluminescence microscope
Original language	English
Pages (from-to)	1359 - 1362
Journal	Silicon Carbide. III-Nitrides and Related Materials, Pts. 1 and 2
Volume	264-2
Publication status	Published - 1998

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Cite this

@article{dcbca8c00f2749c99f1472c10a749980,

title = "Photoluminescence and Raman scattering characterization of GaN, InGaN and AlGaN films ussing a UV excitation Raman-photoluminescence microscope",

author = "ZC Feng and M Schurman and CA Tran and T Salagaj and B Karlicek and I Ferguson and RA Stall and CD Dyer and KPJ Williams and GD Pitt",

year = "1998",

language = "English",

volume = "264-2",

pages = "1359 -- 1362",

journal = "Silicon Carbide. III-Nitrides and Related Materials, Pts. 1 and 2",

issn = "1662-9752",

publisher = "Trans Tech Publications Ltd",

}

Photoluminescence and Raman scattering characterization of GaN, InGaN and AlGaN films ussing a UV excitation Raman-photoluminescence microscope. / Feng, ZC; Schurman, M; Tran, CA et al.
In: Silicon Carbide. III-Nitrides and Related Materials, Pts. 1 and 2, Vol. 264-2, 1998, p. 1359 - 1362.

Research output: Contribution to journal › Article (Academic Journal) › peer-review

TY - JOUR

T1 - Photoluminescence and Raman scattering characterization of GaN, InGaN and AlGaN films ussing a UV excitation Raman-photoluminescence microscope

AU - Feng, ZC

AU - Schurman, M

AU - Tran, CA

AU - Salagaj, T

AU - Karlicek, B

AU - Ferguson, I

AU - Stall, RA

AU - Dyer, CD

AU - Williams, KPJ

AU - Pitt, GD

PY - 1998

Y1 - 1998

M3 - Article (Academic Journal)

SN - 1662-9752

VL - 264-2

SP - 1359

EP - 1362

JO - Silicon Carbide. III-Nitrides and Related Materials, Pts. 1 and 2

JF - Silicon Carbide. III-Nitrides and Related Materials, Pts. 1 and 2

ER -