Photoluminescence characterization of silicon nanostructures embedded in silicon oxide

J. Barreto*, J. A. Rodríguez, M. Perálvarez, A. Morales, B. Garrido, C. Domínguez

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

6 Citations (Scopus)

Abstract

This paper describes a simple method to analyze the photoluminescent characteristics of materials based on embedded light-emitting nanoclusters. Photoluminescence spectra of deposited silicon sub-oxide layers with the same composition and different thicknesses have been obtained. A saturation of the total luminescence intensity is observed with increase in thickness. By analyzing the photoluminescence spectra several optical and structural parameters can be evaluated. We thus propose a model in which the absorption of light from a nanostructure layer implies the possibility of subsequent luminescence and affects the underlying layers as well. By fitting the data to the developed model, two fundamental parameters are extracted: nanostructures absorption probability, which is independent of the emission energy and the spectra of emission probability of an excited nanostructure which fits a Gaussian shape.

Original languageEnglish
Pages (from-to)588-593
Number of pages6
JournalSuperlattices and Microstructures
Volume43
Issue number5-6
DOIs
Publication statusPublished - May 2008

Keywords

  • Absorption
  • Emission probability
  • PECVD
  • Photoluminescence
  • Silicon nanocrystals

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