Photoluminescence enhancement through silicon implantation on SRO-LPCVD films

A. Morales-Sánchez; K. M. Leyva; M. Aceves; J. Barreto; C. Domínguez; J. A. Luna-López; J. Carrillo; J. Pedraza

doi:10.1016/j.mseb.2010.03.031

Photoluminescence enhancement through silicon implantation on SRO-LPCVD films

A. Morales-Sánchez^*, K. M. Leyva, M. Aceves, J. Barreto, C. Domínguez, J. A. Luna-López, J. Carrillo, J. Pedraza

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

14 Citations (Scopus)

Abstract

Photoluminescence (PL) properties of thin and thick silicon-rich oxide (SRO) and silicon implanted SRO (SI-SRO) films with different silicon excess fabricated by low pressure chemical vapor deposition (LPCVD) were studied. The effects of the annealing temperature and silicon implantation on the PL were also studied. Maximum luminescence intensity was observed with an annealing temperature of 1150 and 1100 °C for thin and thick SRO films, respectively. The PL intensity is strongly enhanced when SRO films are implanted with silicon, especially for thin SRO films. Thin SI-SRO films emit up to six times more than non-implanted films, meanwhile the PL in thick SI-SRO films is only improved less than two times. Therefore, thin SI-SRO films are an interesting alternative for applications such as the fabrication of efficient Si-nps based LEDs.

Original language	English
Pages (from-to)	119-122
Number of pages	4
Journal	Materials Science and Engineering: B
Volume	174
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2010.03.031
Publication status	Published - 25 Oct 2010

Keywords

Photoluminescence
Silicon implanted SRO
Silicon-nanoparticles
Silicon-rich oxide

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title = "Photoluminescence enhancement through silicon implantation on SRO-LPCVD films",

abstract = "Photoluminescence (PL) properties of thin and thick silicon-rich oxide (SRO) and silicon implanted SRO (SI-SRO) films with different silicon excess fabricated by low pressure chemical vapor deposition (LPCVD) were studied. The effects of the annealing temperature and silicon implantation on the PL were also studied. Maximum luminescence intensity was observed with an annealing temperature of 1150 and 1100 °C for thin and thick SRO films, respectively. The PL intensity is strongly enhanced when SRO films are implanted with silicon, especially for thin SRO films. Thin SI-SRO films emit up to six times more than non-implanted films, meanwhile the PL in thick SI-SRO films is only improved less than two times. Therefore, thin SI-SRO films are an interesting alternative for applications such as the fabrication of efficient Si-nps based LEDs.",

keywords = "Photoluminescence, Silicon implanted SRO, Silicon-nanoparticles, Silicon-rich oxide",

author = "A. Morales-S{\'a}nchez and Leyva, {K. M.} and M. Aceves and J. Barreto and C. Dom{\'i}nguez and Luna-L{\'o}pez, {J. A.} and J. Carrillo and J. Pedraza",

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month = oct,

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doi = "10.1016/j.mseb.2010.03.031",

language = "English",

volume = "174",

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journal = "Materials Science and Engineering: B",

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Photoluminescence enhancement through silicon implantation on SRO-LPCVD films. / Morales-Sánchez, A.; Leyva, K. M.; Aceves, M.; Barreto, J.; Domínguez, C.; Luna-López, J. A.; Carrillo, J.; Pedraza, J.

In: Materials Science and Engineering: B, Vol. 174, No. 1-3, 25.10.2010, p. 119-122.

Research output: Contribution to journal › Article (Academic Journal) › peer-review

TY - JOUR

T1 - Photoluminescence enhancement through silicon implantation on SRO-LPCVD films

AU - Morales-Sánchez, A.

AU - Leyva, K. M.

AU - Aceves, M.

AU - Barreto, J.

AU - Domínguez, C.

AU - Luna-López, J. A.

AU - Carrillo, J.

AU - Pedraza, J.

PY - 2010/10/25

Y1 - 2010/10/25

N2 - Photoluminescence (PL) properties of thin and thick silicon-rich oxide (SRO) and silicon implanted SRO (SI-SRO) films with different silicon excess fabricated by low pressure chemical vapor deposition (LPCVD) were studied. The effects of the annealing temperature and silicon implantation on the PL were also studied. Maximum luminescence intensity was observed with an annealing temperature of 1150 and 1100 °C for thin and thick SRO films, respectively. The PL intensity is strongly enhanced when SRO films are implanted with silicon, especially for thin SRO films. Thin SI-SRO films emit up to six times more than non-implanted films, meanwhile the PL in thick SI-SRO films is only improved less than two times. Therefore, thin SI-SRO films are an interesting alternative for applications such as the fabrication of efficient Si-nps based LEDs.

AB - Photoluminescence (PL) properties of thin and thick silicon-rich oxide (SRO) and silicon implanted SRO (SI-SRO) films with different silicon excess fabricated by low pressure chemical vapor deposition (LPCVD) were studied. The effects of the annealing temperature and silicon implantation on the PL were also studied. Maximum luminescence intensity was observed with an annealing temperature of 1150 and 1100 °C for thin and thick SRO films, respectively. The PL intensity is strongly enhanced when SRO films are implanted with silicon, especially for thin SRO films. Thin SI-SRO films emit up to six times more than non-implanted films, meanwhile the PL in thick SI-SRO films is only improved less than two times. Therefore, thin SI-SRO films are an interesting alternative for applications such as the fabrication of efficient Si-nps based LEDs.

KW - Photoluminescence

KW - Silicon implanted SRO

KW - Silicon-nanoparticles

KW - Silicon-rich oxide

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DO - 10.1016/j.mseb.2010.03.031

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JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

SN - 0921-5107

IS - 1-3

ER -

Photoluminescence enhancement through silicon implantation on SRO-LPCVD films

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