| Translated title of the contribution | Photoluminescence investigation of defects created by electron bombardment of 4H-SiC |
|---|---|
| Original language | English |
| Pages (from-to) | 313 - 318 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 556-557 |
| Publication status | Published - Jun 2007 |
Bibliographical note
Publisher: Trans. Tech. Publications LimitedCite this
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