Abstract
A single-precursor solution approach is developed for depositing stoichiometric BiSI thin films featuring pure paraelectric orthorhombic (Pnam) phase. The compact and homogeneous films are composed of flake-shaped grains oriented antiplanar to the substrate and display a sharp optical transition corresponding to a bandgap of 1.57 eV. Optical and Raman signatures of the thin films are rationalized using the quasiparticle G 0W 0@PBE0 and density functional perturbation theory calculations. Electrochemical impedance spectroscopy revealed n-type doping with valence and conduction band edges located at 4.6 and 6.2 eV below vacuum level, respectively. Planar BiSI solar cells are fabricated with the architecture: Glass/FTO/SnO 2/BiSI/F8/Au, where F8 is poly(9,9-di-n-octylfluorenyl-2,7-diyl), showing record conversion efficiency of 1.32% under AM 1.5 illumination.
| Original language | English |
|---|---|
| Pages (from-to) | 3878-3885 |
| Number of pages | 8 |
| Journal | ACS Applied Energy Materials |
| Volume | 2 |
| Issue number | 5 |
| Early online date | 22 Apr 2019 |
| DOIs | |
| Publication status | Published - 28 May 2019 |
Research Groups and Themes
- Bristol BioDesign Institute
- Physical & Theoretical
Keywords
- synthetic biology
- thin-film
- band structure
- BiSI
- photovoltaic
- power conversion losses
- G W @PBE0
Access to Document
- Full-text PDF (accepted author manuscript)
This is the author accepted manuscript (AAM). The final published version (version of record) is available online via ACS at https://pubs.acs.org/doi/10.1021/acsaem.9b00544 . Please refer to any applicable terms of use of the publisher.