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Photovoltaic Performance of Phase-Pure Orthorhombic BiSI Thin-Films

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Photovoltaic Performance of Phase-Pure Orthorhombic BiSI Thin-Films. / Tiwari, Devendra; Alibhai, Dominic; Cardoso Delgado, Fabiola; Mombru, Maia; Fermin, David.

In: ACS Applied Energy Materials, Vol. 2, No. 5, 28.05.2019, p. 3878-3885.

Research output: Contribution to journalArticle

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Tiwari, D, Alibhai, D, Cardoso Delgado, F, Mombru, M & Fermin, D 2019, 'Photovoltaic Performance of Phase-Pure Orthorhombic BiSI Thin-Films', ACS Applied Energy Materials, vol. 2, no. 5, pp. 3878-3885. https://doi.org/10.1021/acsaem.9b00544

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Tiwari D, Alibhai D, Cardoso Delgado F, Mombru M, Fermin D. Photovoltaic Performance of Phase-Pure Orthorhombic BiSI Thin-Films. ACS Applied Energy Materials. 2019 May 28;2(5):3878-3885. https://doi.org/10.1021/acsaem.9b00544

Author

Tiwari, Devendra ; Alibhai, Dominic ; Cardoso Delgado, Fabiola ; Mombru, Maia ; Fermin, David. / Photovoltaic Performance of Phase-Pure Orthorhombic BiSI Thin-Films. In: ACS Applied Energy Materials. 2019 ; Vol. 2, No. 5. pp. 3878-3885.

Bibtex

@article{95812e5d3fb948bca8cbeade28ac24ab,
title = "Photovoltaic Performance of Phase-Pure Orthorhombic BiSI Thin-Films",
abstract = "A single-precursor solution approach is developed for depositing stoichiometric BiSI thin films featuring pure paraelectric orthorhombic (Pnam) phase. The compact and homogeneous films are composed of flake-shaped grains oriented antiplanar to the substrate and display a sharp optical transition corresponding to a bandgap of 1.57 eV. Optical and Raman signatures of the thin films are rationalized using the quasiparticle G 0W 0@PBE0 and density functional perturbation theory calculations. Electrochemical impedance spectroscopy revealed n-type doping with valence and conduction band edges located at 4.6 and 6.2 eV below vacuum level, respectively. Planar BiSI solar cells are fabricated with the architecture: Glass/FTO/SnO 2/BiSI/F8/Au, where F8 is poly(9,9-di-n-octylfluorenyl-2,7-diyl), showing record conversion efficiency of 1.32{\%} under AM 1.5 illumination.",
keywords = "band structure, BiSI, G W @PBE0, photovoltaic, power conversion losses, thin-film",
author = "Devendra Tiwari and Dominic Alibhai and {Cardoso Delgado}, Fabiola and Maia Mombru and David Fermin",
year = "2019",
month = "5",
day = "28",
doi = "10.1021/acsaem.9b00544",
language = "English",
volume = "2",
pages = "3878--3885",
journal = "ACS Applied Energy Materials",
issn = "2574-0962",
publisher = "American Chemical Society",
number = "5",

}

RIS - suitable for import to EndNote

TY - JOUR

T1 - Photovoltaic Performance of Phase-Pure Orthorhombic BiSI Thin-Films

AU - Tiwari, Devendra

AU - Alibhai, Dominic

AU - Cardoso Delgado, Fabiola

AU - Mombru, Maia

AU - Fermin, David

PY - 2019/5/28

Y1 - 2019/5/28

N2 - A single-precursor solution approach is developed for depositing stoichiometric BiSI thin films featuring pure paraelectric orthorhombic (Pnam) phase. The compact and homogeneous films are composed of flake-shaped grains oriented antiplanar to the substrate and display a sharp optical transition corresponding to a bandgap of 1.57 eV. Optical and Raman signatures of the thin films are rationalized using the quasiparticle G 0W 0@PBE0 and density functional perturbation theory calculations. Electrochemical impedance spectroscopy revealed n-type doping with valence and conduction band edges located at 4.6 and 6.2 eV below vacuum level, respectively. Planar BiSI solar cells are fabricated with the architecture: Glass/FTO/SnO 2/BiSI/F8/Au, where F8 is poly(9,9-di-n-octylfluorenyl-2,7-diyl), showing record conversion efficiency of 1.32% under AM 1.5 illumination.

AB - A single-precursor solution approach is developed for depositing stoichiometric BiSI thin films featuring pure paraelectric orthorhombic (Pnam) phase. The compact and homogeneous films are composed of flake-shaped grains oriented antiplanar to the substrate and display a sharp optical transition corresponding to a bandgap of 1.57 eV. Optical and Raman signatures of the thin films are rationalized using the quasiparticle G 0W 0@PBE0 and density functional perturbation theory calculations. Electrochemical impedance spectroscopy revealed n-type doping with valence and conduction band edges located at 4.6 and 6.2 eV below vacuum level, respectively. Planar BiSI solar cells are fabricated with the architecture: Glass/FTO/SnO 2/BiSI/F8/Au, where F8 is poly(9,9-di-n-octylfluorenyl-2,7-diyl), showing record conversion efficiency of 1.32% under AM 1.5 illumination.

KW - band structure

KW - BiSI

KW - G W @PBE0

KW - photovoltaic

KW - power conversion losses

KW - thin-film

UR - http://www.scopus.com/inward/record.url?scp=85066339075&partnerID=8YFLogxK

U2 - 10.1021/acsaem.9b00544

DO - 10.1021/acsaem.9b00544

M3 - Article

AN - SCOPUS:85066339075

VL - 2

SP - 3878

EP - 3885

JO - ACS Applied Energy Materials

JF - ACS Applied Energy Materials

SN - 2574-0962

IS - 5

ER -