Piezoelectric strain in AlGaN/GaN heterostructure field-effect transistors under bias

A Sarua; H Ji; M Kuball; MJ Uren; T Martin; KJ Nash; KP Hilton; RS Balmer

doi:10.1063/1.2182011

Piezoelectric strain in AlGaN/GaN heterostructure field-effect transistors under bias

A Sarua, H Ji, M Kuball, MJ Uren, T Martin, KJ Nash, KP Hilton, RS Balmer

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

93 Citations (Scopus)

Translated title of the contribution	Piezoelectric strain in AlGaN/GaN heterostructure field-effect transistors under bias
Original language	English
Pages (from-to)	1 - 3
Number of pages	3
Journal	Applied Physics Letters
Volume	88 (10, 103502)
DOIs	https://doi.org/10.1063/1.2182011
Publication status	Published - Mar 2006

Bibliographical note

Publisher: American Institute of Physics

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10.1063/1.2182011

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THERMAL IMAGING OF ACTIVE A1GAN/GAN FIELD EFFECT TRANSISTORS USING MICRO RAMAN SPECTROSCOPY
Kuball, M. H. H. (Principal Investigator)
19/03/04 → 19/03/07
Project: Research

Cite this

@article{434103ee5f6c462584edde4043e3a9c3,

title = "Piezoelectric strain in AlGaN/GaN heterostructure field-effect transistors under bias",

author = "A Sarua and H Ji and M Kuball and MJ Uren and T Martin and KJ Nash and KP Hilton and RS Balmer",

note = "Publisher: American Institute of Physics",

year = "2006",

month = mar,

doi = "10.1063/1.2182011",

language = "English",

volume = "88 (10, 103502)",

pages = "1 -- 3",

journal = "Applied Physics Letters",

issn = "1077-3118",

publisher = "American Institute of Physics (AIP)",

}

TY - JOUR

T1 - Piezoelectric strain in AlGaN/GaN heterostructure field-effect transistors under bias

AU - Sarua, A

AU - Ji, H

AU - Kuball, M

AU - Uren, MJ

AU - Martin, T

AU - Nash, KJ

AU - Hilton, KP

AU - Balmer, RS

N1 - Publisher: American Institute of Physics

PY - 2006/3

Y1 - 2006/3

U2 - 10.1063/1.2182011

DO - 10.1063/1.2182011

M3 - Article (Academic Journal)

SN - 1077-3118

VL - 88 (10, 103502)

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Piezoelectric strain in AlGaN/GaN heterostructure field-effect transistors under bias

Bibliographical note

Research Groups and Themes

Access to Document

Handle.net

Projects

THERMAL IMAGING OF ACTIVE A1GAN/GAN FIELD EFFECT TRANSISTORS USING MICRO RAMAN SPECTROSCOPY

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