Point defects in compound semiconductors

DTJ Hurle

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

8 Citations (Scopus)

Abstract

Experimental methods used to determine the concentrations and charge states of native point defects in III-V and II-VI semiconductors are outlined. The use of a chemical thermodynamic model to unify the very large amount of experimental data on the III-Vs is described. It is demonstrated how dopant solubility, self and dopant diffusion, annealing behaviour and phase extent are all coupled to types, concentrations and charge states of the native point defects.
Translated title of the contributionPoint defects in compound semiconductors
Original languageEnglish
Title of host publication12th International Summer School of Crystal Growth held in Conjunction with the 14th International Conference on Crystal Growth Grenoble August 2004
EditorsMuller , G; Metois, P JJ; Rudolph
PublisherAmsterdam:Elsevier
Pages323 - 343
Number of pages21
ISBN (Print)0444512868
Publication statusPublished - 2004

Bibliographical note

Conference Proceedings/Title of Journal: Crystal Growth - from fundamentals to technology
Conference Organiser: French Assoc. Cryst. Growth

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