Abstract
Experimental methods used to determine the concentrations and charge states of native point defects in III-V and II-VI semiconductors are outlined. The use of a chemical thermodynamic model to unify the very large amount of experimental data on the III-Vs is described.
It is demonstrated how dopant solubility, self and dopant diffusion, annealing behaviour and phase extent are all coupled to types, concentrations and charge states of the native point defects.
| Translated title of the contribution | Point defects in compound semiconductors |
|---|---|
| Original language | English |
| Title of host publication | 12th International Summer School of Crystal Growth held in Conjunction with the 14th International Conference on Crystal Growth Grenoble August 2004 |
| Editors | Muller , G; Metois, P JJ; Rudolph |
| Publisher | Amsterdam:Elsevier |
| Pages | 323 - 343 |
| Number of pages | 21 |
| ISBN (Print) | 0444512868 |
| Publication status | Published - 2004 |
Bibliographical note
Conference Proceedings/Title of Journal: Crystal Growth - from fundamentals to technologyConference Organiser: French Assoc. Cryst. Growth