Preparation of a specific quantum state is a required step for a variety of proposed quantum applications. We report an experimental demonstration of optical quantum state inversion in a single semiconductor quantum dot using adiabatic rapid passage. This method is insensitive to variation in the optical coupling in contrast with earlier work based on Rabi oscillations. We show that when the pulse power exceeds a threshold for inversion, the final state is independent of power. This provides a new tool for preparing quantum states in semiconductor dots and has a wide range of potential uses.
|Translated title of the contribution||Population inversion in a single InGaAs quantum dot using the method of adiabatic rapid passage|
|Number of pages||4|
|Journal||Physical Review Letters|
|Publication status||Published - Feb 2011|