Formation of porous structures in GaN/SiC heterostructures in light of the need for porous templates for improved GaN epitaxial growth has been studied. It has been observed that the built-in stress in the heterostructures greatly affects the process of porous structure formation. As a result, it is shown that two major issues are necessary to consider when fabricating a porous GaN/SiC template: firstly, the initial heterostructures must be selected according to the built-in stress value, and secondly, anodization parameters necessary to achieve a homogeneous porous structure must be used. Having considered these, we achieved 30% stress reduction in 2" GaN/SiC templates. Improvements of GaN growth result from employing porous templates and have been shown to depend on growth conditions.
|Translated title of the contribution||Porous GaN/SiC templates for homoepitaxial growth: effect of the built-in stress on the formation of porous structures|
|Pages (from-to)||50 - 55|
|Number of pages||6|
|Journal||Semiconductor Science and Technology|
|Publication status||Published - 2005|
Bibliographical notePublisher: IOP Publishing Ltd