Porous GaN/SiC templates for homoepitaxial growth: effect of the built-in stress on the formation of porous structures

MG Mynbaeva, KD Mynbaev, A Sarua, M Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

8 Citations (Scopus)

Abstract

Formation of porous structures in GaN/SiC heterostructures in light of the need for porous templates for improved GaN epitaxial growth has been studied. It has been observed that the built-in stress in the heterostructures greatly affects the process of porous structure formation. As a result, it is shown that two major issues are necessary to consider when fabricating a porous GaN/SiC template: firstly, the initial heterostructures must be selected according to the built-in stress value, and secondly, anodization parameters necessary to achieve a homogeneous porous structure must be used. Having considered these, we achieved 30% stress reduction in 2" GaN/SiC templates. Improvements of GaN growth result from employing porous templates and have been shown to depend on growth conditions.
Translated title of the contributionPorous GaN/SiC templates for homoepitaxial growth: effect of the built-in stress on the formation of porous structures
Original languageEnglish
Pages (from-to)50 - 55
Number of pages6
JournalSemiconductor Science and Technology
Volume20
Issue number1
Publication statusPublished - 2005

Bibliographical note

Publisher: IOP Publishing Ltd

Structured keywords

  • CDTR

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