Positive and Negative Bias Temperature Instability on Crosstalk-Stressed Symmetrical & Asymmetrical Double-Trench SiC MOSFETs

Juefei Yang; Saeed Jahdi; Bernard H Stark; Chengjun Shen; Olayiwola Alatise; Jose Ortiz Gonzalez; Phil H Mellor

doi:10.1109/ECCE50734.2022.9948074

Positive and Negative Bias Temperature Instability on Crosstalk-Stressed Symmetrical & Asymmetrical Double-Trench SiC MOSFETs

Juefei Yang, Saeed Jahdi, Bernard H Stark, Chengjun Shen, Olayiwola Alatise, Jose Ortiz Gonzalez, Phil H Mellor

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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Abstract

The bias temperature instability (BTI) has been an issue for SiC MOSFET. The device performance would vary with the induced threshold drift. In this paper, the peak shoot-through current during crosstalk under the impact BTI is investigated in regard to increase of stressing time and recovery time for SiC symmetrical and asymmetrical double-trench MOSFET as well as planar MOSFET for comparison purpose. The change of threshold voltage under BTI is measured and are compared with the shoot-through. The measurement of threshold drift under accelerated gate stressing is also conducted and the impact of temperature is investigated.

Original language	English
Title of host publication	2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022
Place of Publication	Detroit, MI, USA
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	7
ISBN (Electronic)	9781728193878
ISBN (Print)	9781728193885
DOIs	https://doi.org/10.1109/ECCE50734.2022.9948074
Publication status	Published - 30 Nov 2022
Event	2022 IEEE Energy Conversion Congress and Exposition (ECCE) - Duration: 9 Oct 2022 → 13 Oct 2022

Publication series

Name	Energy Conversion Congress and Exposition, (ECCE)
Publisher	IEEE
ISSN (Print)	2329-3721
ISSN (Electronic)	2329-3748

Conference

Conference	2022 IEEE Energy Conversion Congress and Exposition (ECCE)
Period	9/10/22 → 13/10/22

Bibliographical note

Funding Information:
This work is supported by the UK EPSRC Supergen Energy Networks Hub under grant number EP/S00078X/2.

Publisher Copyright:
© 2022 IEEE.

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Reliability analysis of planar and symmetrical & asymmetrical trench discrete SiC Power MOSFETs
Yang, J. (Author), Jahdi, S. (Supervisor) & Stark, B. (Supervisor), 5 Dec 2023
Student thesis: Doctoral Thesis › Doctor of Philosophy (PhD)

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Yang, J., Jahdi, S., Stark, B. H., Shen, C., Alatise, O., Gonzalez, J. O., & Mellor, P. H. (2022). Positive and Negative Bias Temperature Instability on Crosstalk-Stressed Symmetrical & Asymmetrical Double-Trench SiC MOSFETs. In 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022 ( Energy Conversion Congress and Exposition, (ECCE) ). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ECCE50734.2022.9948074

Yang, Juefei ; Jahdi, Saeed ; Stark, Bernard H et al. / Positive and Negative Bias Temperature Instability on Crosstalk-Stressed Symmetrical & Asymmetrical Double-Trench SiC MOSFETs. 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022. Detroit, MI, USA : Institute of Electrical and Electronics Engineers (IEEE), 2022. ( Energy Conversion Congress and Exposition, (ECCE) ).

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title = "Positive and Negative Bias Temperature Instability on Crosstalk-Stressed Symmetrical \& Asymmetrical Double-Trench SiC MOSFETs",

abstract = "The bias temperature instability (BTI) has been an issue for SiC MOSFET. The device performance would vary with the induced threshold drift. In this paper, the peak shoot-through current during crosstalk under the impact BTI is investigated in regard to increase of stressing time and recovery time for SiC symmetrical and asymmetrical double-trench MOSFET as well as planar MOSFET for comparison purpose. The change of threshold voltage under BTI is measured and are compared with the shoot-through. The measurement of threshold drift under accelerated gate stressing is also conducted and the impact of temperature is investigated.",

author = "Juefei Yang and Saeed Jahdi and Stark, \{Bernard H\} and Chengjun Shen and Olayiwola Alatise and Gonzalez, \{Jose Ortiz\} and Mellor, \{Phil H\}",

note = "Funding Information: This work is supported by the UK EPSRC Supergen Energy Networks Hub under grant number EP/S00078X/2. Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Energy Conversion Congress and Exposition (ECCE) ; Conference date: 09-10-2022 Through 13-10-2022",

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day = "30",

doi = "10.1109/ECCE50734.2022.9948074",

language = "English",

isbn = "9781728193885",

series = " Energy Conversion Congress and Exposition, (ECCE) ",

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Yang, J, Jahdi, S , Stark, BH, Shen, C, Alatise, O, Gonzalez, JO & Mellor, PH 2022, Positive and Negative Bias Temperature Instability on Crosstalk-Stressed Symmetrical & Asymmetrical Double-Trench SiC MOSFETs. in 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022. Energy Conversion Congress and Exposition, (ECCE) , Institute of Electrical and Electronics Engineers (IEEE), Detroit, MI, USA, 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 9/10/22. https://doi.org/10.1109/ECCE50734.2022.9948074

Positive and Negative Bias Temperature Instability on Crosstalk-Stressed Symmetrical & Asymmetrical Double-Trench SiC MOSFETs. / Yang, Juefei; Jahdi, Saeed ; Stark, Bernard H et al.
2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022. Detroit, MI, USA: Institute of Electrical and Electronics Engineers (IEEE), 2022. ( Energy Conversion Congress and Exposition, (ECCE) ).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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T1 - Positive and Negative Bias Temperature Instability on Crosstalk-Stressed Symmetrical & Asymmetrical Double-Trench SiC MOSFETs

AU - Yang, Juefei

AU - Jahdi, Saeed

AU - Stark, Bernard H

AU - Shen, Chengjun

AU - Alatise, Olayiwola

AU - Gonzalez, Jose Ortiz

AU - Mellor, Phil H

PY - 2022/11/30

Y1 - 2022/11/30

N2 - The bias temperature instability (BTI) has been an issue for SiC MOSFET. The device performance would vary with the induced threshold drift. In this paper, the peak shoot-through current during crosstalk under the impact BTI is investigated in regard to increase of stressing time and recovery time for SiC symmetrical and asymmetrical double-trench MOSFET as well as planar MOSFET for comparison purpose. The change of threshold voltage under BTI is measured and are compared with the shoot-through. The measurement of threshold drift under accelerated gate stressing is also conducted and the impact of temperature is investigated.

AB - The bias temperature instability (BTI) has been an issue for SiC MOSFET. The device performance would vary with the induced threshold drift. In this paper, the peak shoot-through current during crosstalk under the impact BTI is investigated in regard to increase of stressing time and recovery time for SiC symmetrical and asymmetrical double-trench MOSFET as well as planar MOSFET for comparison purpose. The change of threshold voltage under BTI is measured and are compared with the shoot-through. The measurement of threshold drift under accelerated gate stressing is also conducted and the impact of temperature is investigated.

U2 - 10.1109/ECCE50734.2022.9948074

DO - 10.1109/ECCE50734.2022.9948074

M3 - Conference Contribution (Conference Proceeding)

SN - 9781728193885

T3 - Energy Conversion Congress and Exposition, (ECCE)

BT - 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022

PB - Institute of Electrical and Electronics Engineers (IEEE)

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T2 - 2022 IEEE Energy Conversion Congress and Exposition (ECCE)

Y2 - 9 October 2022 through 13 October 2022

ER -

Yang J, Jahdi S , Stark BH, Shen C, Alatise O, Gonzalez JO et al. Positive and Negative Bias Temperature Instability on Crosstalk-Stressed Symmetrical & Asymmetrical Double-Trench SiC MOSFETs. In 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022. Detroit, MI, USA: Institute of Electrical and Electronics Engineers (IEEE). 2022. ( Energy Conversion Congress and Exposition, (ECCE) ). doi: 10.1109/ECCE50734.2022.9948074

Positive and Negative Bias Temperature Instability on Crosstalk-Stressed Symmetrical & Asymmetrical Double-Trench SiC MOSFETs

Abstract

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Bibliographical note

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Student theses

Reliability analysis of planar and symmetrical & asymmetrical trench discrete SiC Power MOSFETs

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