Power Device Gate Driver Circuit With Reduced Number of Isolation Transformers for Switched Reluctance Machine Drive

J N McNeill, Derrick M J Holliday, PH Mellor

Research output: Contribution to journalArticle (Academic Journal)peer-review

10 Citations (Scopus)

Abstract

The combined asymmetric half-bridge power converter topology is often used to drive switched reluctance machines (SRMs). This letter describes a transformer-isolated power semiconductor gate driver circuit that uses only two transformers to supply all three power devices in a combined asymmetric half bridge with local power supplies and drive signals. Therefore, the entire gate driver circuitry for a six-switch converter driving a four-phase SRM requires only four isolation transformers, thereby reducing cost. Operation of a prototype circuit is demonstrated.
Translated title of the contributionPower Device Gate Driver Circuit With Reduced Number of Isolation Transformers for Switched Reluctance Machine Drive
Original languageEnglish
Pages (from-to)548 - 552
Number of pages5
JournalIEEE Transactions on Power Electronics
Volume24
Issue number2
DOIs
Publication statusPublished - Feb 2009

Bibliographical note

Publisher: IEEE

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