Pressure-dependent relaxation in the photoexcited mott insulator et - F 2 TCNQ: Influence of hopping and correlations on quasiparticle recombination rates

M. Mitrano, G. Cotugno, S. R. Clark, R. Singla, S. Kaiser, J. Stähler, R. Beyer, M. Dressel, L. Baldassarre, D. Nicoletti, A. Perucchi, T. Hasegawa, H. Okamoto, D. Jaksch, A. Cavalleri

Research output: Contribution to journalArticle (Academic Journal)

26 Citations (Scopus)

Abstract

We measure the ultrafast recombination of photoexcited quasiparticles (holon-doublon pairs) in the one dimensional Mott insulator ET-F2TCNQ as a function of external pressure, which is used to tune the electronic structure. At each pressure value, we first fit the static optical properties and extract the electronic bandwidth t and the intersite correlation energy V. We then measure the recombination times as a function of pressure, and we correlate them with the corresponding microscopic parameters. We find that the recombination times scale differently than for metals and semiconductors. A fit to our data based on the time-dependent extended Hubbard Hamiltonian suggests that the competition between local recombination and delocalization of the Mott-Hubbard exciton dictates the efficiency of the recombination.

Original languageEnglish
Article number117801
JournalPhysical Review Letters
Volume112
Issue number11
DOIs
Publication statusPublished - 18 Mar 2014

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