Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

C. Hodges*, J. Pomeroy, M. Kuball

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

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Abstract

We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate. (C) 2014 AIP Publishing LLC.

Original languageEnglish
Article number064504
Number of pages5
JournalJournal of Applied Physics
Volume115
Issue number6
DOIs
Publication statusPublished - 14 Feb 2014

Structured keywords

  • CDTR

Keywords

  • THERMAL-BOUNDARY RESISTANCE
  • SPECTROSCOPY
  • SCATTERING

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