| Translated title of the contribution | Profiling band structure in GaN devices by electron holography |
|---|---|
| Original language | English |
| Pages (from-to) | 410 - 414 |
| Journal | Journal of Crystal Growth |
| Volume | 230 |
| Publication status | Published - 2001 |
Profiling band structure in GaN devices by electron holography
D Cherns, H Mokhtari, C Jiao, R Averbeck, H Reichert
Research output: Contribution to journal › Article (Academic Journal) › peer-review
10
Citations
(Scopus)