Profiling electric fields around dislocations in GaN

D Cherns; CG Jiao; H Mokhtari

Profiling electric fields around dislocations in GaN

D Cherns, CG Jiao, H Mokhtari

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Abstract

Electron holography has been used to measure the electric potential around edge and screw dislocations in n-GaN viewed in a near end-oil geometry. It is shown that the potential at edge dislocations is 2V below that in the bulk consistent with a negative charge of 2 electrons/c (c = 0.52nm). Preliminary results, which suggest that screw dislocations are also negatively charged, are discussed.

Translated title of the contribution	Profiling electric fields around dislocations in GaN
Original language	English
Pages (from-to)	597 - 602
Journal	Material Research Society Symposium Proceedings
Volume	693
Issue number	Symposium I – GaN and Related Alloys—2001
Publication status	Published - 2002

Bibliographical note

Editors: Northrup JE, Neugebauer J, Look DC, Chichibu SF, Riechert H
ISBN: 155899629X
Publisher: Materials Research Society
Name and Venue of Conference: Symposium on GaN and Related Alloys, 2001 MRS Fall Meeting, Boston
Conference Organiser: Materials Research Society

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title = "Profiling electric fields around dislocations in GaN",

abstract = "Electron holography has been used to measure the electric potential around edge and screw dislocations in n-GaN viewed in a near end-oil geometry. It is shown that the potential at edge dislocations is 2V below that in the bulk consistent with a negative charge of 2 electrons/c (c = 0.52nm). Preliminary results, which suggest that screw dislocations are also negatively charged, are discussed.",

author = "D Cherns and CG Jiao and H Mokhtari",

note = "Editors: Northrup JE, Neugebauer J, Look DC, Chichibu SF, Riechert H ISBN: 155899629X Publisher: Materials Research Society Name and Venue of Conference: Symposium on GaN and Related Alloys, 2001 MRS Fall Meeting, Boston Conference Organiser: Materials Research Society",

year = "2002",

language = "English",

volume = "693",

pages = "597 -- 602",

journal = "Material Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Cambridge University Press",

number = "Symposium I – GaN and Related Alloys—2001",

}

TY - JOUR

T1 - Profiling electric fields around dislocations in GaN

AU - Cherns, D

AU - Jiao, CG

AU - Mokhtari, H

N1 - Editors: Northrup JE, Neugebauer J, Look DC, Chichibu SF, Riechert H ISBN: 155899629X Publisher: Materials Research Society Name and Venue of Conference: Symposium on GaN and Related Alloys, 2001 MRS Fall Meeting, Boston Conference Organiser: Materials Research Society

PY - 2002

Y1 - 2002

N2 - Electron holography has been used to measure the electric potential around edge and screw dislocations in n-GaN viewed in a near end-oil geometry. It is shown that the potential at edge dislocations is 2V below that in the bulk consistent with a negative charge of 2 electrons/c (c = 0.52nm). Preliminary results, which suggest that screw dislocations are also negatively charged, are discussed.

AB - Electron holography has been used to measure the electric potential around edge and screw dislocations in n-GaN viewed in a near end-oil geometry. It is shown that the potential at edge dislocations is 2V below that in the bulk consistent with a negative charge of 2 electrons/c (c = 0.52nm). Preliminary results, which suggest that screw dislocations are also negatively charged, are discussed.

M3 - Article (Academic Journal)

VL - 693

SP - 597

EP - 602

JO - Material Research Society Symposium Proceedings

JF - Material Research Society Symposium Proceedings

SN - 0272-9172

IS - Symposium I – GaN and Related Alloys—2001

ER -