Profiling electric fields around dislocations in GaN

D Cherns, CG Jiao, H Mokhtari

Research output: Contribution to journalArticle (Academic Journal)peer-review

Abstract

Electron holography has been used to measure the electric potential around edge and screw dislocations in n-GaN viewed in a near end-oil geometry. It is shown that the potential at edge dislocations is 2V below that in the bulk consistent with a negative charge of 2 electrons/c (c = 0.52nm). Preliminary results, which suggest that screw dislocations are also negatively charged, are discussed.
Translated title of the contributionProfiling electric fields around dislocations in GaN
Original languageEnglish
Pages (from-to)597 - 602
JournalMaterial Research Society Symposium Proceedings
Volume693
Issue numberSymposium I – GaN and Related Alloys—2001
Publication statusPublished - 2002

Bibliographical note

Editors: Northrup JE, Neugebauer J, Look DC, Chichibu SF, Riechert H
ISBN: 155899629X
Publisher: Materials Research Society
Name and Venue of Conference: Symposium on GaN and Related Alloys, 2001 MRS Fall Meeting, Boston
Conference Organiser: Materials Research Society

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