Profiling Ge islands in Si by large angle convergent beam electron diffraction

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Translated title of the contribution	Profiling Ge islands in Si by large angle convergent beam electron diffraction
Original language	English
Pages (from-to)	211 - 215
Journal	Journal of Electron Microscopy
Volume	47
Publication status	Published - 1998

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@article{d1f5dcbd7a61471fa878fa5198114fa1,

title = "Profiling Ge islands in Si by large angle convergent beam electron diffraction",

author = "D Cherns and AA Hovsepian and W Jaeger",

year = "1998",

language = "English",

volume = "47",

pages = "211 -- 215",

journal = "Journal of Electron Microscopy",

issn = "0022-0744",

publisher = "Japanese Society of Microscopy",

}