Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

Huarui Sun, Miguel Montes Bajo, Michael J Uren, Martin H H Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

15 Citations (Scopus)
313 Downloads (Pure)

Abstract

Gate leakage degradation of AlGaN/GaN high electron mobility transistors under OFF-state stress is investigated using a combination of electrical, optical, and surface morphology characterizations. The generation of leakage “hot spots” at the edge of the gate is found to be strongly temperature accelerated. The time for the formation of each failure site follows a Weibull distribution with a shape parameter in the range of 0.7–0.9 from room temperature up to 120 °C. The average leakage per failure site is only weakly temperature dependent. The stress-induced structural degradation at the leakage sites exhibits a temperature dependence in the surface morphology, which is consistent with a surface defect generation process involving temperature-associated changes in the breakdown sites.
Original languageEnglish
Article number043505
Number of pages4
JournalApplied Physics Letters
Volume106
Issue number4
Early online date30 Jan 2015
DOIs
Publication statusPublished - 30 Jan 2015

Structured keywords

  • CDTR

Keywords

  • III-V semiconductors
  • Leakage currents
  • Electroluminescence
  • MODFETs
  • Crystal defects

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