Pseudo-metal-base transistor with high gain

MS Meruvia, ARV Benvenho, IA Hummelgen, AA Pasa, W Schwarzacher

Research output: Contribution to journalArticle (Academic Journal)peer-review

18 Citations (Scopus)

Abstract

We use evaporated C-60 fullerene as emitter, a conducting polymer blend as base, and Si as collector in a vertical transistor structure similar to a metal-base transistor. The conducting polymer blend used as a base is poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate). The measured common-base current gain of our pseudo-metal-base transistor (p-MBT) is close to 1.0. The p-MBT is straightforward to fabricate and is compatible with conventional Si-based electronics.
Translated title of the contributionPseudo-metal-base transistor with high gain
Original languageEnglish
Pages (from-to)263504
JournalApplied Physics Letters
Volume86(26)
Publication statusPublished - 2005

Bibliographical note

Publisher: Amer. Inst. Physics

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