Abstract
We use evaporated C-60 fullerene as emitter, a conducting polymer blend as base, and Si as collector in a vertical transistor structure similar to a metal-base transistor. The conducting polymer blend used as a base is poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate). The measured common-base current gain of our pseudo-metal-base transistor (p-MBT) is close to 1.0. The p-MBT is straightforward to fabricate and is compatible with conventional Si-based electronics.
| Translated title of the contribution | Pseudo-metal-base transistor with high gain |
|---|---|
| Original language | English |
| Pages (from-to) | 263504 |
| Journal | Applied Physics Letters |
| Volume | 86(26) |
| Publication status | Published - 2005 |