Pseudo-metal-base transistor with high gain

MS Meruvia; ARV Benvenho; IA Hummelgen; AA Pasa; W Schwarzacher

Pseudo-metal-base transistor with high gain

MS Meruvia, ARV Benvenho, IA Hummelgen, AA Pasa, W Schwarzacher

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

20 Citations (Scopus)

Abstract

We use evaporated C-60 fullerene as emitter, a conducting polymer blend as base, and Si as collector in a vertical transistor structure similar to a metal-base transistor. The conducting polymer blend used as a base is poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate). The measured common-base current gain of our pseudo-metal-base transistor (p-MBT) is close to 1.0. The p-MBT is straightforward to fabricate and is compatible with conventional Si-based electronics.

Translated title of the contribution	Pseudo-metal-base transistor with high gain
Original language	English
Pages (from-to)	263504
Journal	Applied Physics Letters
Volume	86(26)
Publication status	Published - 2005

Bibliographical note

Publisher: Amer. Inst. Physics

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@article{6f8ccc4f9158498fa9a206a88d0a0075,

title = "Pseudo-metal-base transistor with high gain",

abstract = "We use evaporated C-60 fullerene as emitter, a conducting polymer blend as base, and Si as collector in a vertical transistor structure similar to a metal-base transistor. The conducting polymer blend used as a base is poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate). The measured common-base current gain of our pseudo-metal-base transistor (p-MBT) is close to 1.0. The p-MBT is straightforward to fabricate and is compatible with conventional Si-based electronics.",

author = "MS Meruvia and ARV Benvenho and IA Hummelgen and AA Pasa and W Schwarzacher",

note = "Publisher: Amer. Inst. Physics",

year = "2005",

language = "English",

volume = "86(26)",

pages = "263504",

journal = "Applied Physics Letters",

issn = "1077-3118",

publisher = "American Institute of Physics (AIP)",

}

TY - JOUR

T1 - Pseudo-metal-base transistor with high gain

AU - Meruvia, MS

AU - Benvenho, ARV

AU - Hummelgen, IA

AU - Pasa, AA

AU - Schwarzacher, W

N1 - Publisher: Amer. Inst. Physics

PY - 2005

Y1 - 2005

N2 - We use evaporated C-60 fullerene as emitter, a conducting polymer blend as base, and Si as collector in a vertical transistor structure similar to a metal-base transistor. The conducting polymer blend used as a base is poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate). The measured common-base current gain of our pseudo-metal-base transistor (p-MBT) is close to 1.0. The p-MBT is straightforward to fabricate and is compatible with conventional Si-based electronics.

AB - We use evaporated C-60 fullerene as emitter, a conducting polymer blend as base, and Si as collector in a vertical transistor structure similar to a metal-base transistor. The conducting polymer blend used as a base is poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate). The measured common-base current gain of our pseudo-metal-base transistor (p-MBT) is close to 1.0. The p-MBT is straightforward to fabricate and is compatible with conventional Si-based electronics.

M3 - Article (Academic Journal)

SN - 1077-3118

VL - 86(26)

SP - 263504

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Pseudo-metal-base transistor with high gain

Abstract

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