Pulsed electroluminescence in silicon nanocrystals-based devices fabricated by PECVD

Jorge Barreto*, Mariano Perálvarez, Jose Antonio Rodríguez, Alfredo Morales, Montse Riera, Manel López, Blas Garrido, Laura Lechuga, Carlos Dominguez

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

23 Citations (Scopus)

Abstract

Fully compatible CMOS capacitive devices have been developed in order to obtain electrically stimulated luminescence. By high-temperature annealing in N2 atmosphere PECVD non-stoichiometric silica layers, silicon nanocrystals were formed. Photoluminescence, as well as structural studies, were carried out on these layers to decide the best material composition, which lies next to 17% of silicon excess. Under pulsed electrical stimulation, devices show sharp, narrow, less than 5 μs and pulse-frequency-independent, luminescence peaks at the end of the stimulation pulse. Current analysis on those capacities show hole injection at the beginning and electron injection at the end of the stimulation pulses. It is seen that no positive pulses are needed for attaining bipolar charge injection. Electroluminescence is detected when biasing with negative pulses at about 15 V and increasing up to 50 V. The electroluminescence spectrum matches photoluminescence one, allowing assigning both luminescent radiation to the same emission mechanism, that is, electron-hole recombination within the silicon nanocrystals.

Original languageEnglish
Pages (from-to)193-196
Number of pages4
JournalPhysica E: Low-dimensional Systems and Nanostructures
Volume38
Issue number1-2
DOIs
Publication statusPublished - Apr 2007

Keywords

  • Electroluminescence
  • Field effect luminescence
  • PECVD
  • Si-NC
  • Silicon led
  • Silicon luminescence
  • Suboxide

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