Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

Manikant Singh; Michael A. Casbon; Michael J. Uren; James W. Pomeroy; Stefano Dalcanale; Serge Karboyan; Paul J. Tasker; Man Hoi Wong; Kohei Sasaki; Akito Kuramata; Shigenobu Yamakoshi; Masataka Higashiwaki; Martin Kuball

doi:10.1109/LED.2018.2865832

Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

Manikant Singh, Michael A. Casbon, Michael J. Uren, James W. Pomeroy, Stefano Dalcanale, Serge Karboyan, Paul J. Tasker, Man Hoi Wong, Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi, Masataka Higashiwaki, Martin Kuball

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Abstract

Comparison between pulsed and CW large signal RF performance of field-plated β -Ga 2 O 3 MOSFETs has been reported. Reduced self-heating when pulse resulted in a power added efficiency of 12%, drain efficiency of 22.4%, output power density of 0.13 W/mm, and maximum gain up to 4.8 dB at 1 GHz for a 2- μm gate length device. Increased power dissipation for higher VDS and IDS resulted in a degradation in performance, which, thermal simulation showed, could be entirely explained by self-heating. Buffer and surface trapping contributions have been evaluated using gate and drain lag measurements, showing minimal impact on device performance. These results suggest that β -Ga 2 O 3 is a good candidate for future RF applications.

Original language	English
Pages (from-to)	1572-1575
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	10
Early online date	16 Aug 2018
DOIs	https://doi.org/10.1109/LED.2018.2865832
Publication status	Published - Oct 2018

Structured keywords

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Keywords

Ga2O3 MOSFET
large signal RF
power added efficiency (PAE)
pulsed IV
pulsed RF

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10.1109/LED.2018.2865832

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@article{50e1394e687c44b5979c0f3293a603c6,

title = "Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs",

abstract = "Comparison between pulsed and CW large signal RF performance of field-plated β -Ga 2 O 3 MOSFETs has been reported. Reduced self-heating when pulse resulted in a power added efficiency of 12%, drain efficiency of 22.4%, output power density of 0.13 W/mm, and maximum gain up to 4.8 dB at 1 GHz for a 2- μm gate length device. Increased power dissipation for higher VDS and IDS resulted in a degradation in performance, which, thermal simulation showed, could be entirely explained by self-heating. Buffer and surface trapping contributions have been evaluated using gate and drain lag measurements, showing minimal impact on device performance. These results suggest that β -Ga 2 O 3 is a good candidate for future RF applications.",

keywords = "Ga2O3 MOSFET, large signal RF, power added efficiency (PAE), pulsed IV, pulsed RF",

author = "Manikant Singh and Casbon, {Michael A.} and Uren, {Michael J.} and Pomeroy, {James W.} and Stefano Dalcanale and Serge Karboyan and Tasker, {Paul J.} and Wong, {Man Hoi} and Kohei Sasaki and Akito Kuramata and Shigenobu Yamakoshi and Masataka Higashiwaki and Martin Kuball",

year = "2018",

month = oct,

doi = "10.1109/LED.2018.2865832",

language = "English",

volume = "39",

pages = "1572--1575",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "10",

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T1 - Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

AU - Singh, Manikant

AU - Casbon, Michael A.

AU - Uren, Michael J.

AU - Pomeroy, James W.

AU - Dalcanale, Stefano

AU - Karboyan, Serge

AU - Tasker, Paul J.

AU - Wong, Man Hoi

AU - Sasaki, Kohei

AU - Kuramata, Akito

AU - Yamakoshi, Shigenobu

AU - Higashiwaki, Masataka

AU - Kuball, Martin

PY - 2018/10

Y1 - 2018/10

N2 - Comparison between pulsed and CW large signal RF performance of field-plated β -Ga 2 O 3 MOSFETs has been reported. Reduced self-heating when pulse resulted in a power added efficiency of 12%, drain efficiency of 22.4%, output power density of 0.13 W/mm, and maximum gain up to 4.8 dB at 1 GHz for a 2- μm gate length device. Increased power dissipation for higher VDS and IDS resulted in a degradation in performance, which, thermal simulation showed, could be entirely explained by self-heating. Buffer and surface trapping contributions have been evaluated using gate and drain lag measurements, showing minimal impact on device performance. These results suggest that β -Ga 2 O 3 is a good candidate for future RF applications.

AB - Comparison between pulsed and CW large signal RF performance of field-plated β -Ga 2 O 3 MOSFETs has been reported. Reduced self-heating when pulse resulted in a power added efficiency of 12%, drain efficiency of 22.4%, output power density of 0.13 W/mm, and maximum gain up to 4.8 dB at 1 GHz for a 2- μm gate length device. Increased power dissipation for higher VDS and IDS resulted in a degradation in performance, which, thermal simulation showed, could be entirely explained by self-heating. Buffer and surface trapping contributions have been evaluated using gate and drain lag measurements, showing minimal impact on device performance. These results suggest that β -Ga 2 O 3 is a good candidate for future RF applications.

KW - Ga2O3 MOSFET

KW - large signal RF

KW - power added efficiency (PAE)

KW - pulsed IV

KW - pulsed RF

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U2 - 10.1109/LED.2018.2865832

DO - 10.1109/LED.2018.2865832

M3 - Article (Academic Journal)

AN - SCOPUS:85051758785

SN - 0741-3106

VL - 39

SP - 1572

EP - 1575

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

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High Performance Buffers for RF GaN Electronics

Professor Martin H H Kuball

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Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

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