Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

Manikant Singh, Michael A. Casbon, Michael J. Uren, James W. Pomeroy, Stefano Dalcanale, Serge Karboyan, Paul J. Tasker, Man Hoi Wong, Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi, Masataka Higashiwaki, Martin Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

26 Citations (Scopus)
257 Downloads (Pure)

Abstract

Comparison between pulsed and CW large signal RF performance of field-plated β -Ga 2 O 3 MOSFETs has been reported. Reduced self-heating when pulse resulted in a power added efficiency of 12%, drain efficiency of 22.4%, output power density of 0.13 W/mm, and maximum gain up to 4.8 dB at 1 GHz for a 2- μm gate length device. Increased power dissipation for higher VDS and IDS resulted in a degradation in performance, which, thermal simulation showed, could be entirely explained by self-heating. Buffer and surface trapping contributions have been evaluated using gate and drain lag measurements, showing minimal impact on device performance. These results suggest that β -Ga 2 O 3 is a good candidate for future RF applications.
Original languageEnglish
Pages (from-to)1572-1575
Number of pages4
JournalIEEE Electron Device Letters
Volume39
Issue number10
Early online date16 Aug 2018
DOIs
Publication statusPublished - Oct 2018

Structured keywords

  • CDTR

Keywords

  • Ga2O3 MOSFET
  • large signal RF
  • power added efficiency (PAE)
  • pulsed IV
  • pulsed RF

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