Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

Manikant Singh; Michael A. Casbon; Michael J. Uren; James W. Pomeroy; Stefano Dalcanale; Serge Karboyan; Paul J. Tasker; Man Hoi Wong; Kohei Sasaki; Akito Kuramata; Shigenobu Yamakoshi; Masataka Higashiwaki; Martin Kuball

doi:10.1109/LED.2018.2865832

Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

Manikant Singh
, Michael A. Casbon
, Michael J. Uren
, James W. Pomeroy
, Stefano Dalcanale
, Serge Karboyan
, Paul J. Tasker
, Man Hoi Wong
, Kohei Sasaki
, Akito Kuramata
, Shigenobu Yamakoshi
, Masataka Higashiwaki
, Martin Kuball

Research output: Contribution to journal › Article (Academic Journal) › peer-review

78 Citations (Scopus)

374 Downloads (Pure)

Abstract

Comparison between pulsed and CW large signal RF performance of field-plated β -Ga 2 O 3 MOSFETs has been reported. Reduced self-heating when pulse resulted in a power added efficiency of 12%, drain efficiency of 22.4%, output power density of 0.13 W/mm, and maximum gain up to 4.8 dB at 1 GHz for a 2- μm gate length device. Increased power dissipation for higher VDS and IDS resulted in a degradation in performance, which, thermal simulation showed, could be entirely explained by self-heating. Buffer and surface trapping contributions have been evaluated using gate and drain lag measurements, showing minimal impact on device performance. These results suggest that β -Ga 2 O 3 is a good candidate for future RF applications.

Original language	English
Pages (from-to)	1572-1575
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	10
Early online date	16 Aug 2018
DOIs	https://doi.org/10.1109/LED.2018.2865832
Publication status	Published - Oct 2018

Research Groups and Themes

CDTR

Keywords

Ga2O3 MOSFET
large signal RF
power added efficiency (PAE)
pulsed IV
pulsed RF

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10.1109/LED.2018.2865832

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@article{50e1394e687c44b5979c0f3293a603c6,

title = "Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs",

abstract = "Comparison between pulsed and CW large signal RF performance of field-plated β -Ga 2 O 3 MOSFETs has been reported. Reduced self-heating when pulse resulted in a power added efficiency of 12\%, drain efficiency of 22.4\%, output power density of 0.13 W/mm, and maximum gain up to 4.8 dB at 1 GHz for a 2- μm gate length device. Increased power dissipation for higher VDS and IDS resulted in a degradation in performance, which, thermal simulation showed, could be entirely explained by self-heating. Buffer and surface trapping contributions have been evaluated using gate and drain lag measurements, showing minimal impact on device performance. These results suggest that β -Ga 2 O 3 is a good candidate for future RF applications.",

keywords = "Ga2O3 MOSFET, large signal RF, power added efficiency (PAE), pulsed IV, pulsed RF",

author = "Manikant Singh and Casbon, \{Michael A.\} and Uren, \{Michael J.\} and Pomeroy, \{James W.\} and Stefano Dalcanale and Serge Karboyan and Tasker, \{Paul J.\} and Wong, \{Man Hoi\} and Kohei Sasaki and Akito Kuramata and Shigenobu Yamakoshi and Masataka Higashiwaki and Martin Kuball",

year = "2018",

month = oct,

doi = "10.1109/LED.2018.2865832",

language = "English",

volume = "39",

pages = "1572--1575",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "10",

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TY - JOUR

T1 - Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

AU - Singh, Manikant

AU - Casbon, Michael A.

AU - Uren, Michael J.

AU - Pomeroy, James W.

AU - Dalcanale, Stefano

AU - Karboyan, Serge

AU - Tasker, Paul J.

AU - Wong, Man Hoi

AU - Sasaki, Kohei

AU - Kuramata, Akito

AU - Yamakoshi, Shigenobu

AU - Higashiwaki, Masataka

AU - Kuball, Martin

PY - 2018/10

Y1 - 2018/10

N2 - Comparison between pulsed and CW large signal RF performance of field-plated β -Ga 2 O 3 MOSFETs has been reported. Reduced self-heating when pulse resulted in a power added efficiency of 12%, drain efficiency of 22.4%, output power density of 0.13 W/mm, and maximum gain up to 4.8 dB at 1 GHz for a 2- μm gate length device. Increased power dissipation for higher VDS and IDS resulted in a degradation in performance, which, thermal simulation showed, could be entirely explained by self-heating. Buffer and surface trapping contributions have been evaluated using gate and drain lag measurements, showing minimal impact on device performance. These results suggest that β -Ga 2 O 3 is a good candidate for future RF applications.

AB - Comparison between pulsed and CW large signal RF performance of field-plated β -Ga 2 O 3 MOSFETs has been reported. Reduced self-heating when pulse resulted in a power added efficiency of 12%, drain efficiency of 22.4%, output power density of 0.13 W/mm, and maximum gain up to 4.8 dB at 1 GHz for a 2- μm gate length device. Increased power dissipation for higher VDS and IDS resulted in a degradation in performance, which, thermal simulation showed, could be entirely explained by self-heating. Buffer and surface trapping contributions have been evaluated using gate and drain lag measurements, showing minimal impact on device performance. These results suggest that β -Ga 2 O 3 is a good candidate for future RF applications.

KW - Ga2O3 MOSFET

KW - large signal RF

KW - power added efficiency (PAE)

KW - pulsed IV

KW - pulsed RF

UR - https://www.scopus.com/pages/publications/85051758785

U2 - 10.1109/LED.2018.2865832

DO - 10.1109/LED.2018.2865832

M3 - Article (Academic Journal)

AN - SCOPUS:85051758785

SN - 0741-3106

VL - 39

SP - 1572

EP - 1575

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

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High Performance Buffers for RF GaN Electronics

Professor Martin H H Kuball

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Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

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