The present study investigates the behaviour and performance of commercially available GaN HEMTs provided by Cree Inc. The gain and power variations at pulse repetition frequencies (PRFs) in the range 100-400 kHz are presented. Rise and fall times are also investigated at different PRFs and power levels. The pulsed RF waveforms are obtained by switching the gate bias of the transistor on and completely off to ensure that the device goes through full transients for every pulse. The RF frequency at which the study is conducted is 3.5 GHz. The aim of the study is to assess the suitability of commercial GaN HEMTs to pulsed RF applications such as Radar.
|Translated title of the contribution||Pulsed operation and performance of commercial GaN HEMTs|
|Title of host publication||39th European Microwave Integrated Circuits Conference, 2009 (EuMIC 2009), Rome, Italy|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Pages||226 - 229|
|Number of pages||4|
|Publication status||Published - Sep 2009|
|Event||4th European Microwave Integrated Circuits Conference - Rome, Italy|
Duration: 1 Sep 2009 → …
|Conference||4th European Microwave Integrated Circuits Conference|
|Period||1/09/09 → …|
Bibliographical noteRose publication type: Conference contribution
Sponsorship: The authors wish to thank Cree Inc and Novacom Microwave for supplying free samples and providing great assistance and support. Also a special thanks goes to our lab technician Mr Ken Stevens for all his help with the design and setup of the experiments.
This work has been partially supported by MBDA.
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