The present study investigates the behaviour and performance of commercially available GaN HEMTs provided by Cree Inc. The gain and power variations at pulse repetition frequencies (PRFs) in the range 100-400 kHz are presented. Rise and fall times are also investigated at different PRFs and power levels. The pulsed RF waveforms are obtained by switching the gate bias of the transistor on and completely off to ensure that the device goes through full transients for every pulse. The RF frequency at which the study is conducted is 3.5 GHz. The aim of the study is to assess the suitability of commercial GaN HEMTs to pulsed RF applications such as Radar.
|Title of host publication||39th European Microwave Integrated Circuits Conference, 2009 (EuMIC 2009), Rome, Italy|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Pages||226 - 229|
|Number of pages||4|
|Publication status||Published - Sep 2009|
|Event||4th European Microwave Integrated Circuits Conference - Rome, Italy|
Duration: 1 Sep 2009 → …
|Conference||4th European Microwave Integrated Circuits Conference|
|Period||1/09/09 → …|
Bibliographical noteRose publication type: Conference contribution
Sponsorship: The authors wish to thank Cree Inc and Novacom Microwave for supplying free samples and providing great assistance and support. Also a special thanks goes to our lab technician Mr Ken Stevens for all his help with the design and setup of the experiments.
This work has been partially supported by MBDA.
This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Bristol's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to firstname.lastname@example.org.
By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
Fornetti, F., Morris, KA., & Beach, MA. (2009). Pulsed operation and performance of commercial GaN HEMTs. In 39th European Microwave Integrated Circuits Conference, 2009 (EuMIC 2009), Rome, Italy (pp. 226 - 229). Institute of Electrical and Electronics Engineers (IEEE). http://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=5296375&isnumber=5295902&punumber=5286914&k2dockey=5296375@ieeecnfs&query=%28+%28%28morris%29%3Cin%3Emetadata+%29+%3Cand%3E+%28%28fornetti%29%3Cin%3Emetadata+%29+%29&pos=0&access=no