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Fabrication of nanometre-scale structures in short timescales and with high throughput has great importance in the future of nanoscale science and technology. We show that the local oxidation of hydrogen-passivated silicon surfaces by intermittent-contact mode atomic force microscopy can be applied on timescales as low as 500 ns to create single oxide nanostructures with dimensions of 0.6 x 15nm(2). Furthermore, we report on preliminary experiments demonstrating that local oxidation can also be achieved with relative tip-sample speeds in excess of 2cms(-1) in order to pattern larger areas. This was realised using a high-speed scan stage based on a quartz crystal resonator operating at 20 kHz.