Quantifying Temperature-dependent Substrate Loss in GaN-on-Si RF Technology

Hareesh Chandrasekar*, Michael Uren, Michael A. Casbon, H. Hirshy, Abdalla Eblabla, Khaled Elgaid, James Pomeroy, P Tasker, Martin Kuball

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

8 Citations (Scopus)
251 Downloads (Pure)


Intrinsic limits to temperature-dependent substrate loss for GaN-on-Si technology, due to the change in resistivity of the substrate with temperature, are evaluated using an experimentally validated device simulation framework. Effect of room temperature substrate resistivity on temperature-dependent coplanar waveguide (CPW) line loss at various operating frequency bands is then presented. CPW lines for GaN-on-high-resistivity Si are shown to have a pronounced temperature dependence for temperatures above 150 °C and have lower substrate losses for frequencies above the X-band. On the other hand, GaN-on-low-resistivity Si is shown to be more temperature insensitive and has lower substrate losses than even highly resistive Si for lower operating frequencies. The effect of various CPW geometries on substrate loss is also presented to generalize the discussion. These results are expected to act as a benchmark for temperature-dependent substrate loss in GaN-on-Si RF technology.

Original languageEnglish
Article number8641454
Pages (from-to)1681-1687
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number4
Early online date13 Feb 2019
Publication statusPublished - 1 Apr 2019

Structured keywords

  • CDTR


  • Device simulations
  • GaN-based FETs
  • GaN-on-silicon
  • passives
  • RF loss
  • silicon substrates
  • temperature-dependent loss
  • thermal management

Fingerprint Dive into the research topics of 'Quantifying Temperature-dependent Substrate Loss in GaN-on-Si RF Technology'. Together they form a unique fingerprint.

Cite this