Abstract
We report magneto-transport measurements including Hall, Rxy, longitudinal, Rxx, and vertical, Rxx, magnetoresistance on nearly 3-dimensional (3D) 200 layer GaAs/AlGaAs quantum well structures. Although the interlayer bandwidth is nearly 20% of the Fermi energy, we still observe complete quantization of the Hall resistance for the 3D quantum Hall state. The temperature dependence of the Rxx minimum shows two unusual features: initially, at higher temperatures 1 K where the quantum Hall state develops, a gap with an activation energy much smaller than the Landau gap is observed: in the low temperature limit 0.030 K a variable range hopping behavior takes over with a residual resistivity limit. Independent measurements of Gzz (in 3D≈1/Rzz) where the chiral edge states dominate the transport show the same temperature dependence
Translated title of the contribution | Quantization and chiral edge state properties in nearly 3D quantum well structures |
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Original language | English |
Title of host publication | Thirteenth International Conference on High Magnetic Fields in Semiconductor Physics. SemiMag 13 |
DOIs | |
Publication status | Published - 1999 |