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Quantum Depletion of Superconductivity in 3D Diamond Nanowires

  • Gufei Zhang*
  • , Simon Collienne
  • , Ramiz Zulkharnay
  • , Xiaoxing Ke
  • , Liwang Liu
  • , Songyu Li
  • , Sen Zhang
  • , Yongzhe Zhang
  • , Yejun Li
  • , N Asger Mortensen
  • , Victor Moshchalkov
  • , Jiaqi Zhu
  • , Alejandro Silhanek*
  • , Paul W May*
  • *Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

1 Citation (Scopus)

Abstract

Superconducting nanowires underpin the development of a variety of highly advanced quantum devices such as single-photon detectors and quantum circuits. In 1D superconducting nanowires, topological fluctuations of the superconducting order parameter, known as phase slips, severely influence the electrical transport. In 3D systems, however, phase-slip events are generally considered to be insignificant. Here, details on the observation of a reentrant resistive state in 3D superconducting diamond nanowires (DNWs) are reported. This exotic resistive state alters the trend of the superconducting transition with an abrupt change of the temperature and magnetic-field coefficients of resistivity and the current coefficient of voltage. This reentrant resistive state is interpreted as being a result of quantum phase slips in the bamboo-like DNWs consisting of multiple sequential grain-boundary-grain junctions. The results provide the first evidence that quantum phase slips can also play a crucial role in determining the electrical transport properties of 3D superconducting nanowires.
Original languageEnglish
Article number2400476
Number of pages8
JournalAdvanced Quantum Technologies
Early online date14 Dec 2024
DOIs
Publication statusE-pub ahead of print - 14 Dec 2024

Bibliographical note

Publisher Copyright:
© 2024 The Author(s). Advanced Quantum Technologies published by Wiley-VCH GmbH.

Research Groups and Themes

  • Physical & Theoretical

Keywords

  • quantum phase slips
  • reentrant resistive state
  • diamond nanowires
  • grain‐boundary‐grain junctions
  • negative magnetoresistance

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