Radiative lifetimes in undoped and p-doped InAs/GaAs quantum dots

Edmund Harbord*, Peter Spencer, Edmund Clarke, Ray Murray

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

33 Citations (Scopus)

Abstract

We investigate the effect of p doping on the luminescence properties of InAs/GaAs self-assembled quantum dots (QDs). Continuous-wave and time-resolved photoluminescence measurements are obtained as a function of temperature and used to extract the radiative lifetime of the QD ground state. We find that the low-temperature luminescence lifetime decreases from ∼1200 to ∼700ps for QDs doped with 0 and 10 holes/dot, respectively. The radiative lifetime of the undoped QDs increases monotonically with temperature and is consistent with Boltzmann spreading over dark states. The luminescence intensity from the heavily doped QDs changes much less with temperature compared with the undoped QDs and we attribute this to the presence of holes in ground states at higher temperatures.

Original languageEnglish
Article number195312
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume80
Issue number19
DOIs
Publication statusPublished - 13 Nov 2009

Research Groups and Themes

  • Photonics and Quantum

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