Raman-IR micro-thermography tool for reliability and failure analysis of electronic devices

A Sarua; JW Pomeroy; M Kuball; A Falk; G Albright; MJ Uren; T Martin

doi:10.1109/IPFA.2008.4588160

Raman-IR micro-thermography tool for reliability and failure analysis of electronic devices

A Sarua, JW Pomeroy, M Kuball, A Falk, G Albright, MJ Uren, T Martin

School of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

3 Citations (Scopus)

Abstract

We report on the development of a integrated Raman - IR thermography technique to probe self-heating in active devices. We compare and discuss advantages of both techniques in terms of spatial resolution on the example of AlGaN/GaN HFET devices. While traditional infra-red (IR) thermography can provide fast overviews of self-heating in the devices over large scales, its use for extraction of channel temperatures is limited by the sub-micron size of the active area in modern devices. Integration with micro-Raman thermography provides not only improvement in spatial resolution down to 0.5 μm on the surface but also unprecedented micron scale depth resolution for true 3D thermography. This enables unique thermal analysis of semiconductor devices on a detailed level not possible before. As it is a generic technique its application can be extended to Si, GaAs and other devices. This opens new opportunities for device performance and reliability optimization, and failure analysis in research and development of modern semiconductor technology, as well as for quality control/ manufacturing environments.

Translated title of the contribution	Raman-IR micro-thermography tool for reliability and failure analysis of electronic devices
Original language	English
Title of host publication	15th Int. Symp. on the Physical and Failure Analysis of Integrated Circuits, Singapore July 2008
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
ISBN (Print)	9781424420391
DOIs	https://doi.org/10.1109/IPFA.2008.4588160
Publication status	Published - Jul 2008

Bibliographical note

Conference Proceedings/Title of Journal: IEEE Conference Proceedings
Conference Organiser: IEEE
Other identifier: invited paper
Other: invited paper

Research Groups and Themes

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10.1109/IPFA.2008.4588160

http://ieeexplore.ieee.org/servlet/opac?punumber=4579686

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3 Citations
1 Other Conference Contribution

Novel Raman spectroscopy imaging in electronic devices: focus on device reliability
Sarua, A., Pomeroy, J. W., Uren, M. J. & Kuball, M. H. H., 24 Jan 2012.
Research output: Contribution to conference › Other Conference Contribution

Cite this

Sarua, A., Pomeroy, JW., Kuball, M., Falk, A., Albright, G., Uren, MJ., & Martin, T. (2008). Raman-IR micro-thermography tool for reliability and failure analysis of electronic devices. In 15th Int. Symp. on the Physical and Failure Analysis of Integrated Circuits, Singapore July 2008 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/IPFA.2008.4588160

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title = "Raman-IR micro-thermography tool for reliability and failure analysis of electronic devices",

abstract = "We report on the development of a integrated Raman - IR thermography technique to probe self-heating in active devices. We compare and discuss advantages of both techniques in terms of spatial resolution on the example of AlGaN/GaN HFET devices. While traditional infra-red (IR) thermography can provide fast overviews of self-heating in the devices over large scales, its use for extraction of channel temperatures is limited by the sub-micron size of the active area in modern devices. Integration with micro-Raman thermography provides not only improvement in spatial resolution down to 0.5 μm on the surface but also unprecedented micron scale depth resolution for true 3D thermography. This enables unique thermal analysis of semiconductor devices on a detailed level not possible before. As it is a generic technique its application can be extended to Si, GaAs and other devices. This opens new opportunities for device performance and reliability optimization, and failure analysis in research and development of modern semiconductor technology, as well as for quality control/ manufacturing environments.",

author = "A Sarua and JW Pomeroy and M Kuball and A Falk and G Albright and MJ Uren and T Martin",

note = "Conference Proceedings/Title of Journal: IEEE Conference Proceedings Conference Organiser: IEEE Other identifier: invited paper Other: invited paper",

year = "2008",

month = jul,

doi = "10.1109/IPFA.2008.4588160",

language = "English",

isbn = "9781424420391",

booktitle = "15th Int. Symp. on the Physical and Failure Analysis of Integrated Circuits, Singapore July 2008",

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Sarua, A , Pomeroy, JW , Kuball, M, Falk, A, Albright, G, Uren, MJ & Martin, T 2008, Raman-IR micro-thermography tool for reliability and failure analysis of electronic devices. in 15th Int. Symp. on the Physical and Failure Analysis of Integrated Circuits, Singapore July 2008. Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/IPFA.2008.4588160

Raman-IR micro-thermography tool for reliability and failure analysis of electronic devices. / Sarua, A ; Pomeroy, JW ; Kuball, M et al.
15th Int. Symp. on the Physical and Failure Analysis of Integrated Circuits, Singapore July 2008. Institute of Electrical and Electronics Engineers (IEEE), 2008.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Raman-IR micro-thermography tool for reliability and failure analysis of electronic devices

AU - Sarua, A

AU - Pomeroy, JW

AU - Kuball, M

AU - Falk, A

AU - Albright, G

AU - Uren, MJ

AU - Martin, T

N1 - Conference Proceedings/Title of Journal: IEEE Conference Proceedings Conference Organiser: IEEE Other identifier: invited paper Other: invited paper

PY - 2008/7

Y1 - 2008/7

N2 - We report on the development of a integrated Raman - IR thermography technique to probe self-heating in active devices. We compare and discuss advantages of both techniques in terms of spatial resolution on the example of AlGaN/GaN HFET devices. While traditional infra-red (IR) thermography can provide fast overviews of self-heating in the devices over large scales, its use for extraction of channel temperatures is limited by the sub-micron size of the active area in modern devices. Integration with micro-Raman thermography provides not only improvement in spatial resolution down to 0.5 μm on the surface but also unprecedented micron scale depth resolution for true 3D thermography. This enables unique thermal analysis of semiconductor devices on a detailed level not possible before. As it is a generic technique its application can be extended to Si, GaAs and other devices. This opens new opportunities for device performance and reliability optimization, and failure analysis in research and development of modern semiconductor technology, as well as for quality control/ manufacturing environments.

AB - We report on the development of a integrated Raman - IR thermography technique to probe self-heating in active devices. We compare and discuss advantages of both techniques in terms of spatial resolution on the example of AlGaN/GaN HFET devices. While traditional infra-red (IR) thermography can provide fast overviews of self-heating in the devices over large scales, its use for extraction of channel temperatures is limited by the sub-micron size of the active area in modern devices. Integration with micro-Raman thermography provides not only improvement in spatial resolution down to 0.5 μm on the surface but also unprecedented micron scale depth resolution for true 3D thermography. This enables unique thermal analysis of semiconductor devices on a detailed level not possible before. As it is a generic technique its application can be extended to Si, GaAs and other devices. This opens new opportunities for device performance and reliability optimization, and failure analysis in research and development of modern semiconductor technology, as well as for quality control/ manufacturing environments.

U2 - 10.1109/IPFA.2008.4588160

DO - 10.1109/IPFA.2008.4588160

M3 - Conference Contribution (Conference Proceeding)

SN - 9781424420391

BT - 15th Int. Symp. on the Physical and Failure Analysis of Integrated Circuits, Singapore July 2008

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Raman-IR micro-thermography tool for reliability and failure analysis of electronic devices

Abstract

Bibliographical note

Research Groups and Themes

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Research output

Novel Raman spectroscopy imaging in electronic devices: focus on device reliability

Cite this