Raman mapping and finite element analysis of epitaxial lateral overgrown GaN on sapphire substrates

M Benyoucef, M Kuball, B Beaumont, V Bousquet, P Gibart

Research output: Contribution to journalArticle (Academic Journal)peer-review

Abstract

Using micro-Raman scattering and finite element (FE) analysis, stress fields in epitaxial lateral overgrown (ELO) GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates using a two-step growth method were investigated. Nearly full stress relaxation at the top ELO GaN surface can be achieved by increasing the thickness of ELO GaN to about 50 mum. Reductions in stress variation between window and overgrown regions can be achieved by using a double ELO GaN growth at a much smaller ELO thickness. Increased compressive stress at the coalescence boundary of two adjacent wings of ELO GaN was related to the presence of voids in this area. In the double ELO growth, stress near the top surface was mainly attributed to the presence of voids on top of the upper dielectric mask.
Translated title of the contributionRaman mapping and finite element analysis of epitaxial lateral overgrown GaN on sapphire substrates
Original languageEnglish
Pages (from-to)109 - 114
Number of pages6
JournalMaterial Research Society Symposium Proceedings
Volume743
Issue numberSymposium L – GaN and Related Alloys
Publication statusPublished - 2003

Bibliographical note

Editors: Wetzel, C; Yu, ET; Speck, JS; Arakawa, Y
ISBN: 155899680X
Publisher: Materials Research Society
Name and Venue of Conference: Symposium on GaN and Related Alloys held at the MRS Fall meeting, December 2002, Boston, Mass
Conference Organiser: Materials Research Society

Structured keywords

  • CDTR

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